Process for manufacturing a schottky contact on a semiconductor substrate (Brevetto)

Type
Label
  • Process for manufacturing a schottky contact on a semiconductor substrate (Brevetto) (literal)
Anno
  • 2006-01-01T00:00:00+01:00 (literal)
Alternative label
  • Roccaforte F, Raineri V, La Via F, Saggio M (2006)
    Process for manufacturing a schottky contact on a semiconductor substrate
    EP1641029 A1
    (literal)
Titolo
  • Process for manufacturing a schottky contact on a semiconductor substrate (literal)
Http://www.cnr.it/ontology/cnr/pubblicazioni.owl#autori
  • Roccaforte F, Raineri V, La Via F, Saggio M (literal)
Numero brevetto
  • EP1641029 A1 (literal)
Http://www.cnr.it/ontology/cnr/pubblicazioni.owl#descrizioneSinteticaDelProdotto
  • A process realizes a Schottky contact on an epitaxial layer of a semiconductor substrate. The process includes depositing a conductive metallic layer on a surface of the epitaxial layer, with achievement of a interface region of conductive metallic layer/semiconductor. The process further comprises a ionic irradiation step directed towards the surface of the epitaxial layer for forming a modified intermediate layer of at least one surface portion of the epitaxial layer for making the electric behavior of the interface region substantially dependant on the contact between the conductive metallic layer and the obtained modified intermediate layer. (literal)
Anno di deposito
  • 2006 (literal)
Http://www.cnr.it/ontology/cnr/pubblicazioni.owl#affiliazioni
  • IMM-CNR Catania STMicroelectronics Catania (literal)
Titolo
  • Process for manufacturing a schottky contact on a semiconductor substrate (literal)
Prodotto di
Autore CNR

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Prodotto
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