Manufacturing process of a germanium implanted HBT bipolar transistor (Brevetto)

Type
Label
  • Manufacturing process of a germanium implanted HBT bipolar transistor (Brevetto) (literal)
Anno
  • 2003-01-01T00:00:00+01:00 (literal)
Alternative label
  • Lombardo S, Nicotra MC, Pinto A (2003)
    Manufacturing process of a germanium implanted HBT bipolar transistor
    US 6,624,017 B1
    (literal)
Titolo
  • Manufacturing process of a germanium implanted HBT bipolar transistor (literal)
Http://www.cnr.it/ontology/cnr/pubblicazioni.owl#autori
  • Lombardo S, Nicotra MC, Pinto A (literal)
Numero brevetto
  • US 6,624,017 B1 (literal)
Http://www.cnr.it/ontology/cnr/pubblicazioni.owl#descrizioneSinteticaDelProdotto
  • A process fabricates a vertical structure high carrier mobility transistor on a substrate of crystalline silicon doped with impurities of the N type, the transistor having a collector region located at a lower portion of the substrate. The process includes: defining a window in the semiconductor substrate; providing a first implantation of germanium atoms through said window; providing a second implantation of acceptor dopants through said window to define a base region; applying an RTA treatment, or treatment in an oven, to re-construct the crystal lattice within the semiconductor substrate. (literal)
Anno di deposito
  • 2003 (literal)
Http://www.cnr.it/ontology/cnr/pubblicazioni.owl#affiliazioni
  • IMM-CNR Catania STMicroelectronics Catania (literal)
Titolo
  • Manufacturing process of a germanium implanted HBT bipolar transistor (literal)
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