Electronic power device integrated on a semiconductor material and related manufacturing process (Brevetto)

Type

• Brevetto (Classe)
• Brevetto (Classe)
• Prodotto della ricerca (Classe)

Label

• Electronic power device integrated on a semiconductor material and related manufacturing process (Brevetto) (literal)

Anno

• 2002-01-01T00:00:00+01:00 (literal)

Alternative label

• Patti D, Priolo F, Privitera V, Franzo' G (2002)
  Electronic power device integrated on a semiconductor material and related manufacturing process
  
  (literal)

Titolo

• Electronic power device integrated on a semiconductor material and related manufacturing process (literal)

Http://www.cnr.it/ontology/cnr/pubblicazioni.owl#autori

• Patti D, Priolo F, Privitera V, Franzo' G (literal)

Http://www.cnr.it/ontology/cnr/pubblicazioni.owl#proprieta

• Stmicroelectronics S.R.L. (literal)

Http://www.cnr.it/ontology/cnr/brevetti.owl#tipoDiBrevetto

• Internazionale (literal)

Numero brevetto

• US6448125 B1 (literal)

Http://www.cnr.it/ontology/cnr/pubblicazioni.owl#descrizioneSinteticaDelProdotto

• An electronic power device is integrated on a substrate of semiconductor material having a first conductivity type, on which an epitaxial layer of the same type of conductivity is grown. The power device comprises a power stage PT and a control stage CT, this latter enclosed in an isolated region having a second type of conductivity type. The power stage PT comprises a first buried area having the second type of conductivity type and a second buried area, partially overlapping the first buried area and having the first conductivity type. The isolation region and the control stage CT comprise respectively a third buried area, having the second conductivity type, and a fourth buried area, partially overlapped to the third buried area and having the first conductivity type. Said first, second, third and fourth buried areas are formed in the epitaxial layers at a depth sufficient to allow the power stage PT and the control stage CT to be entirely formed in the epitaxial layers. (literal)

Anno di deposito

• 2002 (literal)

Http://www.cnr.it/ontology/cnr/pubblicazioni.owl#affiliazioni

• STMicroelectronics Catania IMM-CNR Catania Dip. Fisica e Astronomia Universita' di Catania (literal)

Titolo

• Electronic power device integrated on a semiconductor material and related manufacturing process (literal)

Abstract

• An electronic power device is integrated on a substrate of semiconductor material having a first conductivity type, on which an epitaxial layer of the same type of conductivity is grown. The power device comprises a power stage PT and a control stage CT, this latter enclosed in an isolated region having a second type of conductivity type. The power stage PT comprises a first buried area having the second type of conductivity type and a second buried area, partially overlapping the first buried area and having the first conductivity type. The isolation region and the control stage CT comprise respectively a third buried area, having the second conductivity type, and a fourth buried area, partially overlapped to the third buried area and having the first conductivity type. Said first, second, third and fourth buried areas are formed in the epitaxial layers at a depth sufficient to allow the power stage PT and the control stage CT to be entirely formed in the epitaxial layers. (literal)

Prodotto di

• Institute for microelectronics and microsystems (IMM) (Istituto)
• Sviluppo di metodologie avanzate per dispositivi elettronici micro e nanostrutturati (MD.P05.005.001) (Modulo)

Autore CNR

• VITTORIO PRIVITERA (Persona)
• GIORGIA FRANZO' (Unità di personale interno)

Incoming links:

Autore CNR di

• VITTORIO PRIVITERA (Persona)
• GIORGIA FRANZO' (Unità di personale interno)

Prodotto

• Institute for microelectronics and microsystems (IMM) (Istituto)
• Sviluppo di metodologie avanzate per dispositivi elettronici micro e nanostrutturati (MD.P05.005.001) (Modulo)