Dilute magnetic semiconductor material with ferromagnetic order and device therewith as well as method of production thereof (Brevetto)

Type
Label
  • Dilute magnetic semiconductor material with ferromagnetic order and device therewith as well as method of production thereof (Brevetto) (literal)
Anno
  • 2008-01-01T00:00:00+01:00 (literal)
Alternative label
  • G. PANACCIONE; C. BACK; M. SPERL; W. WEGSCHEIDER; G. WOLTERSDORF; F. MACCHEROZZI; G. ROSSI; M. HOCHSTRASSER; D. PESCIA (2008)
    Dilute magnetic semiconductor material with ferromagnetic order and device therewith as well as method of production thereof
    (literal)
Titolo
  • Dilute magnetic semiconductor material with ferromagnetic order and device therewith as well as method of production thereof (literal)
Http://www.cnr.it/ontology/cnr/pubblicazioni.owl#autori
  • G. PANACCIONE; C. BACK; M. SPERL; W. WEGSCHEIDER; G. WOLTERSDORF; F. MACCHEROZZI; G. ROSSI; M. HOCHSTRASSER; D. PESCIA (literal)
Http://www.cnr.it/ontology/cnr/pubblicazioni.owl#proprieta
  • CNR 40% (literal)
Http://www.cnr.it/ontology/cnr/brevetti.owl#tipoDiBrevetto
  • Internazionale (literal)
Numero brevetto
  • US61/133344 (literal)
Http://www.cnr.it/ontology/cnr/pubblicazioni.owl#note
  • Titolarità congiunta: CNR-INFM 40% Università di Regensburg (DE) 40% EHT Zurigo 20% (literal)
Anno di deposito
  • 2008 (literal)
Http://www.cnr.it/ontology/cnr/pubblicazioni.owl#affiliazioni
  • CNR-INFM Laboratorio nazionale TASC ETH- Zurich, Switzerland Univ. Regensburg, Germany (literal)
Titolo
  • Dilute magnetic semiconductor material with ferromagnetic order and device therewith as well as method of production thereof (literal)
Abstract
  • The present invention relates to a dilute magnetic semiconductor material with magnetic order about at and/or above room temperature, devices therewith and methods of producing such dilute magnetic semiconductor material with magnetic order. It is thus an object of the present invention to provide dilute magnetic semiconductor material with magnetic order about at and/or above room temperature. It is a further object of the present invention to provide a simple and efficient method of producing such a dilute semiconductor material (literal)
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