Micromechanical thin film device of transition metal oxide, and manufacturing method thereof (Brevetto)

Type
Label
  • Micromechanical thin film device of transition metal oxide, and manufacturing method thereof (Brevetto) (literal)
Anno
  • 2009-01-01T00:00:00+01:00 (literal)
Alternative label
  • L. PELLEGRINO; M. BIASOTTI; A. S. SIRI (2009)
    Micromechanical thin film device of transition metal oxide, and manufacturing method thereof
    (literal)
Titolo
  • Micromechanical thin film device of transition metal oxide, and manufacturing method thereof (literal)
Http://www.cnr.it/ontology/cnr/pubblicazioni.owl#autori
  • L. PELLEGRINO; M. BIASOTTI; A. S. SIRI (literal)
Http://www.cnr.it/ontology/cnr/pubblicazioni.owl#proprieta
  • CNR-INFM (literal)
Http://www.cnr.it/ontology/cnr/pubblicazioni.owl#url
  • http://worldwide.espacenet.com/publicationDetails/biblio?DB=worldwide.espacenet.com&II=0&ND=3&adjacent=true&locale=en_EP&FT=D&date=20091007&CC=EP&NR=2107039A2&KC=A2 (literal)
Http://www.cnr.it/ontology/cnr/brevetti.owl#tipoDiBrevetto
  • Europeo (literal)
Numero brevetto
  • EP2107039A2 (literal)
Anno di deposito
  • 2009 (literal)
Http://www.cnr.it/ontology/cnr/pubblicazioni.owl#affiliazioni
  • CNR-INFM, 16152 Genova (IT) (literal)
Titolo
  • Micromechanical thin film device of transition metal oxide, and manufacturing method thereof (literal)
Abstract
  • Microelectromechanical device (MEMS) integrated on a crystalline oxide substrate (1) comprising: at least one suspended structure (6) able to deform by the application of an electric or magnetic field and a thin film structure (10) comprising at least one transition metal oxide (10) deposited on the suspended structure (6). The device is characterized by the fact that the suspended structure (6) comprises a bearing layer (4) of crystalline oxides. (literal)
Prodotto di
Autore CNR

Incoming links:


Autore CNR di
Prodotto
data.CNR.it