http://www.cnr.it/ontology/cnr/individuo/prodotto/ID1386
High efficiency and high modal gain InAs/InGaAs/GaAs quantum dot lasers emitting at 1300 nm (Articolo in rivista)
- Type
- Label
- High efficiency and high modal gain InAs/InGaAs/GaAs quantum dot lasers emitting at 1300 nm (Articolo in rivista) (literal)
- Anno
- 2007-01-01T00:00:00+01:00 (literal)
- Alternative label
Salhi, A; Fortunato, L; Martiradonna, L; Todaro, MT; Cingolani, R; Passaseo, A; De Vittorio, M (2007)
High efficiency and high modal gain InAs/InGaAs/GaAs quantum dot lasers emitting at 1300 nm
in Semiconductor science and technology (Print)
(literal)
- Http://www.cnr.it/ontology/cnr/pubblicazioni.owl#autori
- Salhi, A; Fortunato, L; Martiradonna, L; Todaro, MT; Cingolani, R; Passaseo, A; De Vittorio, M (literal)
- Pagina inizio
- Pagina fine
- Http://www.cnr.it/ontology/cnr/pubblicazioni.owl#numeroVolume
- Rivista
- Note
- ISI Web of Science (WOS) (literal)
- Http://www.cnr.it/ontology/cnr/pubblicazioni.owl#affiliazioni
- National Nanotechnology Laboratory of CNR-INFM, Distretto tecnologico ISUFI,
Università di Lecce, 73100 Lecce, Italy (literal)
- Titolo
- High efficiency and high modal gain InAs/InGaAs/GaAs quantum dot lasers emitting at 1300 nm (literal)
- Abstract
- High performance 1300 nm lasers based on self-organized InAs/InGaAs quantum dots (QDs) are reported. By optimizing the QD growth parameters and decreasing the waveguide thickness, a high modal gain and a low transparency current density of 32 cm(-1) and 35 A cm(-2), respectively, were obtained from a device containing five stacked QD layers. The internal quantum efficiency is as high as 90%. (literal)
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