High efficiency and high modal gain InAs/InGaAs/GaAs quantum dot lasers emitting at 1300 nm (Articolo in rivista)

Type
Label
  • High efficiency and high modal gain InAs/InGaAs/GaAs quantum dot lasers emitting at 1300 nm (Articolo in rivista) (literal)
Anno
  • 2007-01-01T00:00:00+01:00 (literal)
Alternative label
  • Salhi, A; Fortunato, L; Martiradonna, L; Todaro, MT; Cingolani, R; Passaseo, A; De Vittorio, M (2007)
    High efficiency and high modal gain InAs/InGaAs/GaAs quantum dot lasers emitting at 1300 nm
    in Semiconductor science and technology (Print)
    (literal)
Http://www.cnr.it/ontology/cnr/pubblicazioni.owl#autori
  • Salhi, A; Fortunato, L; Martiradonna, L; Todaro, MT; Cingolani, R; Passaseo, A; De Vittorio, M (literal)
Pagina inizio
  • 396 (literal)
Pagina fine
  • 398 (literal)
Http://www.cnr.it/ontology/cnr/pubblicazioni.owl#numeroVolume
  • 22 (literal)
Rivista
Note
  • ISI Web of Science (WOS) (literal)
Http://www.cnr.it/ontology/cnr/pubblicazioni.owl#affiliazioni
  • National Nanotechnology Laboratory of CNR-INFM, Distretto tecnologico ISUFI, Università di Lecce, 73100 Lecce, Italy (literal)
Titolo
  • High efficiency and high modal gain InAs/InGaAs/GaAs quantum dot lasers emitting at 1300 nm (literal)
Abstract
  • High performance 1300 nm lasers based on self-organized InAs/InGaAs quantum dots (QDs) are reported. By optimizing the QD growth parameters and decreasing the waveguide thickness, a high modal gain and a low transparency current density of 32 cm(-1) and 35 A cm(-2), respectively, were obtained from a device containing five stacked QD layers. The internal quantum efficiency is as high as 90%. (literal)
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