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Chapter 7: Power dependent cathodoluminescence in III-Nitrides heterostructures: From internal field screening to controlled band gap modulation (Contributo in volume (capitolo o saggio))
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- Chapter 7: Power dependent cathodoluminescence in III-Nitrides heterostructures: From internal field screening to controlled band gap modulation (Contributo in volume (capitolo o saggio)) (literal)
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- 2008-01-01T00:00:00+01:00 (literal)
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- 10.1016/B978-0-444-53099-8.00007-5 (literal)
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Salviati G. 1; Rossi F. 1; Armani N. 1; Grillo V. 2; Lazzarini L. 1 (2008)
Chapter 7: Power dependent cathodoluminescence in III-Nitrides heterostructures: From internal field screening to controlled band gap modulation
ELSEVIER SCIENCE BV, PO BOX 211, 1000 AE AMSTERDAM, NETHERLANDS, AMSTERDAM (Paesi Bassi) in Characterization of Semiconductor Heterostructures and Nanostructures, 1st edition, 2008
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- Salviati G. 1; Rossi F. 1; Armani N. 1; Grillo V. 2; Lazzarini L. 1 (literal)
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- Characterization of Semiconductor Heterostructures and Nanostructures, 1st edition (literal)
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- In: Characterization of Semiconductor Heterostructures and Nanostructures. pp. 209 - 248. C. Lamberti, Ed (eds.). Amsterdam: Elsevier B.V., 2008. (literal)
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- The aim of this chapter is to show mainly the potentiality of the cathodoluminescence (CL) technique and to what extent it can be applied in the study of III-nitrides heterostructures. A quite recent and unusual application of the CL technique, namely powerdependent CL, will be presented, exploiting and discussing the influence of different injection power conditions, from low to high injection regimes (the latter occurring for n n0 free carrier concentration, with typical values ranging from about 1016-1020 injected e-h pairs cm-3). It has therefore been decided to abbreviate the basics of the technique, which can be easily found in dedicated textbooks, in favor of a deeper discussion of the experimental examples and of some peculiarities of the technique. (literal)
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- 1 IMEM-CNR, Parco Area delle Scienze 37/A, 43100 Parma, Italy; 2 Laboratorio Nazionale TASC-INFM-CNR, Area Science Park, Basovizza S.S. 14 km 143, 5,34012 Trieste, Italy (literal)
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- Chapter 7: Power dependent cathodoluminescence in III-Nitrides heterostructures: From internal field screening to controlled band gap modulation (literal)
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- Characterization of Semiconductor Heterostructures and Nanostructures (literal)
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- 978-0-444-53099-8 (literal)
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- Abstract
- The aim of this chapter is to show mainly the potentiality of the cathodoluminescence (CL) technique and to what extent it can be applied in the study of III-nitrides heterostructures. A quite recent and unusual application of the CL technique, namely powerdependent CL, will be presented, exploiting and discussing the influence of different injection power conditions, from low to high injection regimes (the latter occurring for n >> n0 free carrier concentration, with typical values ranging from about 1016-1020 injected e-h pairs cm-3). It has therefore been decided to abbreviate the basics of the technique, which can be easily
found in dedicated textbooks, in favor of a deeper discussion of the experimental examples and of some peculiarities of the technique. (literal)
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