X-ray photoelectron spectroscopy study of energy-band alignments of Lu2O3 on Ge (Articolo in rivista)

Type
Label
  • X-ray photoelectron spectroscopy study of energy-band alignments of Lu2O3 on Ge (Articolo in rivista) (literal)
Anno
  • 2006-01-01T00:00:00+01:00 (literal)
Alternative label
  • Perego, M; Seguini, G; Scarel, G; Fanciulli, M (2006)
    X-ray photoelectron spectroscopy study of energy-band alignments of Lu2O3 on Ge
    in SIA. Surface and interface analysis
    (literal)
Http://www.cnr.it/ontology/cnr/pubblicazioni.owl#autori
  • Perego, M; Seguini, G; Scarel, G; Fanciulli, M (literal)
Pagina inizio
  • 494 (literal)
Pagina fine
  • 497 (literal)
Http://www.cnr.it/ontology/cnr/pubblicazioni.owl#numeroVolume
  • 38 (literal)
Rivista
Note
  • ISI Web of Science (WOS) (literal)
Http://www.cnr.it/ontology/cnr/pubblicazioni.owl#affiliazioni
  • INFM, Lab MDM, I-20041 Agrate Brianza, Italy (literal)
Titolo
  • X-ray photoelectron spectroscopy study of energy-band alignments of Lu2O3 on Ge (literal)
Abstract
  • X-ray photoelectron spectroscopy (XPS) was used to investigate the band alignment of lutetium oxide films with a germanium substrate. Lu2O3 films were grown on Ge (100) by atomic layer deposition. The conduction- (CBO) and valence- (VBO) band offsets of the Lu2O3/Ge heterojunction were determined to be 2.2 +/- 0.1 and 2.9 +/- 0.1 eV respectively. Internal photoemission measurements performed on metal-oxide-semiconductor devices gave a CBO of 2.1 +/- 0.1 eV and a VBO of 3.0 eV, in excellent agreement, within the experimental error, with the values obtained by XPS. Copyright (C) 2006 John Wiley & Sons, Ltd. (literal)
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