Structural and electronic properties of thin Ni layers on Cu(111) as investigated by ARPES, STM and GIXD (Articolo in rivista)

Type
Label
  • Structural and electronic properties of thin Ni layers on Cu(111) as investigated by ARPES, STM and GIXD (Articolo in rivista) (literal)
Anno
  • 2006-01-01T00:00:00+01:00 (literal)
Http://www.cnr.it/ontology/cnr/pubblicazioni.owl#doi
  • 10.1016/j.susc.2006.01.104 (literal)
Alternative label
  • Mulazzi, M; Stanescu, S; Fujii, J; Vobornik, I; Boeglin, C; Belkhou, R; Rossi, G; Barbier, A (2006)
    Structural and electronic properties of thin Ni layers on Cu(111) as investigated by ARPES, STM and GIXD
    in Surface science
    (literal)
Http://www.cnr.it/ontology/cnr/pubblicazioni.owl#autori
  • Mulazzi, M; Stanescu, S; Fujii, J; Vobornik, I; Boeglin, C; Belkhou, R; Rossi, G; Barbier, A (literal)
Pagina inizio
  • 3938 (literal)
Pagina fine
  • 3942 (literal)
Http://www.cnr.it/ontology/cnr/pubblicazioni.owl#url
  • http://www.sciencedirect.com/science/article/pii/S0039602806004304 (literal)
Http://www.cnr.it/ontology/cnr/pubblicazioni.owl#numeroVolume
  • 600 (literal)
Rivista
Note
  • ISI Web of Science (WOS) (literal)
Http://www.cnr.it/ontology/cnr/pubblicazioni.owl#affiliazioni
  • SOLEIL Synchrotron Orme Merisiers St Aubin, F-91192 Gif Sur Yvette, France; TASC Lab, APE Beamline, I-34012 Trieste, Italy; Univ Modena, Dipartimento Fis, I-41100 Modena, Italy; ESRF, Grenoble, France; IPCMS, Strasbourg, France (literal)
Titolo
  • Structural and electronic properties of thin Ni layers on Cu(111) as investigated by ARPES, STM and GIXD (literal)
Abstract
  • The growth and the crystalline and electronic structure of Ni deposited on single crystalline Cu(111) were studied by scanning tunnelling microscopy (STM), grazing incidence X-ray diffraction (GIXD) and angle-resolved photoemission spectroscopy (ARPES). In the early stages of growth monoatomic-high flat Ni islands, partially covered by Cu migrating from the surface, are observed. Starting from a pseudomorphic epitaxial relationship the in-plane lattice parameter progressively relaxes with increasing coverage. For a 20 monolayer (ML) thick deposit the in-plane lattice parameter is still found halfway between the bulk Ni and Cu lattice parameters. ARPES data also rule out the layer-by-layer growth and provide the values of the Ni exchange splitting. (c) 2006 Elsevier B.V. All rights reserved. (literal)
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