http://www.cnr.it/ontology/cnr/individuo/prodotto/ID135
Band alignment at the La2Hf2O7/(001)Si interface (Articolo in rivista)
- Type
- Label
- Band alignment at the La2Hf2O7/(001)Si interface (Articolo in rivista) (literal)
- Anno
- 2006-01-01T00:00:00+01:00 (literal)
- Http://www.cnr.it/ontology/cnr/pubblicazioni.owl#doi
- 10.1063/1.2204572 (literal)
- Alternative label
Seguini, G; Spiga, S; Bonera, E; Fanciulli, M; Huamantinco, AR; Forst, CJ; Ashman, CR; Blochl, PE; Dimoulas, A; Mavrou, G (2006)
Band alignment at the La2Hf2O7/(001)Si interface
in Applied physics letters
(literal)
- Http://www.cnr.it/ontology/cnr/pubblicazioni.owl#autori
- Seguini, G; Spiga, S; Bonera, E; Fanciulli, M; Huamantinco, AR; Forst, CJ; Ashman, CR; Blochl, PE; Dimoulas, A; Mavrou, G (literal)
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- ISI Web of Science (WOS) (literal)
- Http://www.cnr.it/ontology/cnr/pubblicazioni.owl#affiliazioni
- INFM, CNR, MDM Natl Lab, I-20041 Agrate Brianza, MI, Italy; Clausthal Univ Technol, Inst Theoret Phys, D-38678 Clausthal Zellerfeld, Germany; Natl Ctr Sci Res Demokritos, MBE Lab, Inst Mat Sci, Athens 15310, Greece (literal)
- Titolo
- Band alignment at the La2Hf2O7/(001)Si interface (literal)
- Abstract
- In the perspective of exploring alternative gate dielectrics for the future generation of microelectronic devices, we investigated experimentally and theoretically the interface energy barriers induced on (001) silicon by La2Hf2O7, whose growth has been recently attained by molecular-beam epitaxy. Experimental results show that the 5.6 +/- 0.1 eV band gap of La2Hf2O7 is aligned to the band gap of silicon with a valence band offset of 2.4 +/- 0.1 eV and a conduction band offset of 2.1 +/- 0.1 eV. Density functional theory calculations yield valence band offset values ranging between 1.8 and 2.4 eV. (literal)
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