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Characterization of transient currents in HfO2 capacitors in the short timescale (Articolo in rivista)

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Characterization of transient currents in HfO2 capacitors in the short timescale (Articolo in rivista) (literal)

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Compagnoni, CM; Spinelli, AS; Bianchini, A; Lacaita, AL; Spiga, S; Fanciulli, M (2006)
Characterization of transient currents in HfO2 capacitors in the short timescale
in Microelectronic engineering
(literal)

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Compagnoni, CM; Spinelli, AS; Bianchini, A; Lacaita, AL; Spiga, S; Fanciulli, M (literal)

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Politecn Milan IU NET, Dipartimento Elettron & Informaz, I-20133 Milan, Italy; CNR, IFN, I-20133 Milan, Italy; CNR, INFM, Lab Nazl, MDM, I-20041 Agrate Brianza, Italy (literal)

Titolo

Characterization of transient currents in HfO2 capacitors in the short timescale (literal)

Abstract

We present a detailed experimental investigation of transient currents in HfO2 capacitors in the short timescale. We show that the transient currents flowing through the capacitor plates when the gate voltage is reset to zero after a low voltage stress period follow a power-law time dependence t(-x) (with alpha similar or equal to 1) over more than eight decades of time and down to the mu s timescale. As transient currents in HfO2 are largely increased with respect to the SiO2 case, these results confirm that transient effects can be a severe issue for the successful integration of high-k dielectrics. (c) 2006 Elsevier B.V. All rights reserved. (literal)

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