http://www.cnr.it/ontology/cnr/individuo/prodotto/ID132339
Polysilicon mesoscopic wires coated by pd as H2 sensors (Contributo in volume (capitolo o saggio))
- Type
- Label
- Polysilicon mesoscopic wires coated by pd as H2 sensors (Contributo in volume (capitolo o saggio)) (literal)
- Anno
- 2009-01-01T00:00:00+01:00 (literal)
- Http://www.cnr.it/ontology/cnr/pubblicazioni.owl#doi
- 10.1142/9789812835987_0027 (literal)
- Alternative label
M. Benetti(1), D. Cannatà(1), F. Di Pietrantonio(1), E. Verona(1), C. Di Natale(2), A. D'Amico(2), S. Paletti(2), M. Lemme(3), A, Tibuzzi(4), B. Margesin(4), G. Soncini(5), G. F. Dalla Betta(5); (2009)
Polysilicon mesoscopic wires coated by pd as H2 sensors
World Scientific Publ. Co., Singapore (Singapore) in , 2009
(literal)
- Http://www.cnr.it/ontology/cnr/pubblicazioni.owl#autori
- M. Benetti(1), D. Cannatà(1), F. Di Pietrantonio(1), E. Verona(1), C. Di Natale(2), A. D'Amico(2), S. Paletti(2), M. Lemme(3), A, Tibuzzi(4), B. Margesin(4), G. Soncini(5), G. F. Dalla Betta(5); (literal)
- Http://www.cnr.it/ontology/cnr/pubblicazioni.owl#citta
- Http://www.cnr.it/ontology/cnr/pubblicazioni.owl#note
- Http://www.cnr.it/ontology/cnr/pubblicazioni.owl#affiliazioni
- (1) CNR - Instituto di Acustica \"O.M. Corbino\", (2) Dipartimento di Ingegneria Elettronica - Università di Roma \"Tor Vergata\", (3) AMO GmbH, AMICA (Advanced Microelectronic Center Aachen), (4) Divisione Microsistemi, FBK-Irst, (5) Dipartimento di Informatica e Telecomunicazioni - Università di Trento. (literal)
- Titolo
- Polysilicon mesoscopic wires coated by pd as H2 sensors (literal)
- Http://www.cnr.it/ontology/cnr/pubblicazioni.owl#inCollana
- Sensor & Microsystems (literal)
- Abstract
- In this work a novel monocrystalline silicon nanowires array has been investigated and
presented as hydrogen sensor, designed and fabricated by employing high resolution
microfabrication techniques and featuring a high surface/volume ratio. The nanowires
arrays makes up the channel of a MOS system, palladium-silicon dioxide-silicon.
Several devices have been fabricated by using a SOI (Silicon On Insulator) substrate.
Source and Drain have been geometrically patterned by optical lithography and Boron pdoped.
Electron Beam Litography (EBL) defined the MOS channel made up of a
nanowires array of different length and width in different transistors. The pads of Source
and Drain have been manufactured with an aluminium film deposition. The Gate has been
fabricated with a grown silicon oxide layer (17.4 nm) and Palladium has been used as
gate contact. Polarizing and exposing the device to H2/N2 cycles at different
concentrations some preliminary measurements have been successfully conducted. (literal)
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