Polysilicon mesoscopic wires coated by pd as H2 sensors (Contributo in volume (capitolo o saggio))

Type
Label
  • Polysilicon mesoscopic wires coated by pd as H2 sensors (Contributo in volume (capitolo o saggio)) (literal)
Anno
  • 2009-01-01T00:00:00+01:00 (literal)
Http://www.cnr.it/ontology/cnr/pubblicazioni.owl#doi
  • 10.1142/9789812835987_0027 (literal)
Alternative label
  • M. Benetti(1), D. Cannatà(1), F. Di Pietrantonio(1), E. Verona(1), C. Di Natale(2), A. D’'Amico(2), S. Paletti(2), M. Lemme(3), A, Tibuzzi(4), B. Margesin(4), G. Soncini(5), G. F. Dalla Betta(5); (2009)
    Polysilicon mesoscopic wires coated by pd as H2 sensors
    World Scientific Publ. Co., Singapore (Singapore) in , 2009
    (literal)
Http://www.cnr.it/ontology/cnr/pubblicazioni.owl#autori
  • M. Benetti(1), D. Cannatà(1), F. Di Pietrantonio(1), E. Verona(1), C. Di Natale(2), A. D’'Amico(2), S. Paletti(2), M. Lemme(3), A, Tibuzzi(4), B. Margesin(4), G. Soncini(5), G. F. Dalla Betta(5); (literal)
Http://www.cnr.it/ontology/cnr/pubblicazioni.owl#citta
  • Singapore (literal)
Http://www.cnr.it/ontology/cnr/pubblicazioni.owl#note
  • pp. 161-165 (literal)
Http://www.cnr.it/ontology/cnr/pubblicazioni.owl#affiliazioni
  • (1) CNR - Instituto di Acustica \"O.M. Corbino\", (2) Dipartimento di Ingegneria Elettronica - Università di Roma \"Tor Vergata\", (3) AMO GmbH, AMICA (Advanced Microelectronic Center Aachen), (4) Divisione Microsistemi, FBK-Irst, (5) Dipartimento di Informatica e Telecomunicazioni - Università di Trento. (literal)
Titolo
  • Polysilicon mesoscopic wires coated by pd as H2 sensors (literal)
Http://www.cnr.it/ontology/cnr/pubblicazioni.owl#inCollana
  • Sensor & Microsystems (literal)
Abstract
  • In this work a novel monocrystalline silicon nanowires array has been investigated and presented as hydrogen sensor, designed and fabricated by employing high resolution microfabrication techniques and featuring a high surface/volume ratio. The nanowires arrays makes up the channel of a MOS system, palladium-silicon dioxide-silicon. Several devices have been fabricated by using a SOI (Silicon On Insulator) substrate. Source and Drain have been geometrically patterned by optical lithography and Boron pdoped. Electron Beam Litography (EBL) defined the MOS channel made up of a nanowires array of different length and width in different transistors. The pads of Source and Drain have been manufactured with an aluminium film deposition. The Gate has been fabricated with a grown silicon oxide layer (17.4 nm) and Palladium has been used as gate contact. Polarizing and exposing the device to H2/N2 cycles at different concentrations some preliminary measurements have been successfully conducted. (literal)
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