Germanium diffusion during HfO2 growth on Ge by molecular beam epitaxy (Articolo in rivista)

Type
Label
  • Germanium diffusion during HfO2 growth on Ge by molecular beam epitaxy (Articolo in rivista) (literal)
Anno
  • 2006-01-01T00:00:00+01:00 (literal)
Alternative label
  • Ferrari, S; Spiga, S; Wiemer, C; Fanciulli, M; Dimoulas, A (2006)
    Germanium diffusion during HfO2 growth on Ge by molecular beam epitaxy
    in Applied physics letters
    (literal)
Http://www.cnr.it/ontology/cnr/pubblicazioni.owl#autori
  • Ferrari, S; Spiga, S; Wiemer, C; Fanciulli, M; Dimoulas, A (literal)
Pagina inizio
  • 122906 (literal)
Http://www.cnr.it/ontology/cnr/pubblicazioni.owl#numeroVolume
  • 89 (literal)
Rivista
Note
  • ISI Web of Science (WOS) (literal)
Http://www.cnr.it/ontology/cnr/pubblicazioni.owl#affiliazioni
  • CNR, Lab MDM, INFM, I-20041 Milan, Italy; Demokritos Natl Ctr Sci Res, MBE Lab, Inst Mat Sci, GR-15310 Athens, Greece (literal)
Titolo
  • Germanium diffusion during HfO2 growth on Ge by molecular beam epitaxy (literal)
Abstract
  • The authors study the Ge diffusion during HfO2 growth by molecular beam epitaxy on differently in situ prepared germanium substrates and at different growth temperatures. While HfO2 layers grown directly on Ge do not show any germanium contamination, oxygen rich interfacial layers such as GeOx or GeOxNy partly dissolve into the HfO2 layer, giving rise to high Ge contamination (from 1% to 10%). The use of nitridated interfacial layers does not prevent Ge diffusion into the HfO2 during the growth process because of the high oxygen content present in the nitridated germanium layer. (literal)
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