Energy band alignment of HfO2 on Ge (Articolo in rivista)

Type
Label
  • Energy band alignment of HfO2 on Ge (Articolo in rivista) (literal)
Anno
  • 2006-01-01T00:00:00+01:00 (literal)
Alternative label
  • Perego, M; Seguini, G; Fanciulli, M (2006)
    Energy band alignment of HfO2 on Ge
    in Journal of applied physics
    (literal)
Http://www.cnr.it/ontology/cnr/pubblicazioni.owl#autori
  • Perego, M; Seguini, G; Fanciulli, M (literal)
Http://www.cnr.it/ontology/cnr/pubblicazioni.owl#numeroVolume
  • 100 (literal)
Rivista
Note
  • ISI Web of Science (WOS) (literal)
Http://www.cnr.it/ontology/cnr/pubblicazioni.owl#affiliazioni
  • CNR, INFM, Lab Nazl MDM, I-20041 Milan, Italy (literal)
Titolo
  • Energy band alignment of HfO2 on Ge (literal)
Abstract
  • The band alignment of hafnium oxide films grown on Ge (100) by atomic layer deposition has been investigated by x-ray photoelectron spectroscopy (XPS) and internal photoemission (IPE) spectroscopy. HfO2 films have been grown using HfCl4 as hafnium precursor while O-3 or H2O have been used as oxygen precursors. The valence-band offset (VBO) values, determined by XPS, are 3.0 +/- 0.1 eV and 3.1 +/- 0.1 eV for the samples grown using O-3 and H2O, respectively. A conduction-band offset (CBO) value of 2.0 +/- 0.1 eV has been obtained by IPE for all the samples. Considering a band gap of 5.6 +/- 0.1 eV, as obtained by photoconductivity measurements, XPS and IPE results have been found to be in excellent agreement. The CBO and VBO values are the same in all the samples within the experimental error. The presence of a thick GeOx interfacial layer in the samples grown using O-3 is not affecting the band alignment of the HfO2/Ge heterojunction. (c) 2006 American Institute of Physics. (literal)
Prodotto di
Autore CNR
Insieme di parole chiave

Incoming links:


Autore CNR di
Prodotto
Http://www.cnr.it/ontology/cnr/pubblicazioni.owl#rivistaDi
Insieme di parole chiave di
data.CNR.it