http://www.cnr.it/ontology/cnr/individuo/prodotto/ID121
Energy band alignment of HfO2 on Ge (Articolo in rivista)
- Type
- Label
- Energy band alignment of HfO2 on Ge (Articolo in rivista) (literal)
- Anno
- 2006-01-01T00:00:00+01:00 (literal)
- Alternative label
Perego, M; Seguini, G; Fanciulli, M (2006)
Energy band alignment of HfO2 on Ge
in Journal of applied physics
(literal)
- Http://www.cnr.it/ontology/cnr/pubblicazioni.owl#autori
- Perego, M; Seguini, G; Fanciulli, M (literal)
- Http://www.cnr.it/ontology/cnr/pubblicazioni.owl#numeroVolume
- Rivista
- Note
- ISI Web of Science (WOS) (literal)
- Http://www.cnr.it/ontology/cnr/pubblicazioni.owl#affiliazioni
- CNR, INFM, Lab Nazl MDM, I-20041 Milan, Italy (literal)
- Titolo
- Energy band alignment of HfO2 on Ge (literal)
- Abstract
- The band alignment of hafnium oxide films grown on Ge (100) by atomic layer deposition has been investigated by x-ray photoelectron spectroscopy (XPS) and internal photoemission (IPE) spectroscopy. HfO2 films have been grown using HfCl4 as hafnium precursor while O-3 or H2O have been used as oxygen precursors. The valence-band offset (VBO) values, determined by XPS, are 3.0 +/- 0.1 eV and 3.1 +/- 0.1 eV for the samples grown using O-3 and H2O, respectively. A conduction-band offset (CBO) value of 2.0 +/- 0.1 eV has been obtained by IPE for all the samples. Considering a band gap of 5.6 +/- 0.1 eV, as obtained by photoconductivity measurements, XPS and IPE results have been found to be in excellent agreement. The CBO and VBO values are the same in all the samples within the experimental error. The presence of a thick GeOx interfacial layer in the samples grown using O-3 is not affecting the band alignment of the HfO2/Ge heterojunction. (c) 2006 American Institute of Physics. (literal)
- Prodotto di
- Autore CNR
- Insieme di parole chiave
Incoming links:
- Autore CNR di
- Prodotto
- Http://www.cnr.it/ontology/cnr/pubblicazioni.owl#rivistaDi
- Insieme di parole chiave di