Mn-doped GaN/AlN heterojunction for spintronic devices (Articolo in rivista)

Type
Label
  • Mn-doped GaN/AlN heterojunction for spintronic devices (Articolo in rivista) (literal)
Anno
  • 2006-01-01T00:00:00+01:00 (literal)
Http://www.cnr.it/ontology/cnr/pubblicazioni.owl#doi
  • 10.1016/j.spmi.2006.06.008 (literal)
Alternative label
  • Debernardi, A (2006)
    Mn-doped GaN/AlN heterojunction for spintronic devices
    in Superlattices and microstructures
    (literal)
Http://www.cnr.it/ontology/cnr/pubblicazioni.owl#autori
  • Debernardi, A (literal)
Pagina inizio
  • 530 (literal)
Pagina fine
  • 532 (literal)
Http://www.cnr.it/ontology/cnr/pubblicazioni.owl#numeroVolume
  • 40 (literal)
Rivista
Note
  • ISI Web of Science (WOS) (literal)
Http://www.cnr.it/ontology/cnr/pubblicazioni.owl#affiliazioni
  • CNR, INFM, MDM Natl Lab, I-20041 Agrate Brianza, Italy (literal)
Titolo
  • Mn-doped GaN/AlN heterojunction for spintronic devices (literal)
Abstract
  • We present first principles calculations of Mn-doped GaN/A1N(0001) heterostructures obtained within the framework of density functional theory by using plane wave pseudopotential techniques. We found that for diluted Mn concentration this system present an integer magnetization that is a fingerprint of half-metallic property; this suggests the possibility to use this junction as a spin injector. (c) 2006 Elsevier Ltd. All rights reserved. (literal)
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