Measurements of Charge Collection Efficiency of p+/n Junction SiC Detectors (Comunicazione a convegno)

Type
Label
  • Measurements of Charge Collection Efficiency of p+/n Junction SiC Detectors (Comunicazione a convegno) (literal)
Anno
  • 2004-01-01T00:00:00+01:00 (literal)
Alternative label
  • Moscatelli F.,.Scorzoni A., Poggi A., Bruzzi M., Lagomarsino S., Mersi S., Sciortino S., Lazar M., Di Placido A., Nipoti R (2004)
    Measurements of Charge Collection Efficiency of p+/n Junction SiC Detectors
    in ECSCRM 2004, Bologna
    (literal)
Http://www.cnr.it/ontology/cnr/pubblicazioni.owl#autori
  • Moscatelli F.,.Scorzoni A., Poggi A., Bruzzi M., Lagomarsino S., Mersi S., Sciortino S., Lazar M., Di Placido A., Nipoti R (literal)
Http://www.cnr.it/ontology/cnr/pubblicazioni.owl#descrizioneSinteticaDelProdotto
  • Silicon carbide is a promising wide-gap material because of its excellent electrical and physical properties, which are very relevant to technological applications. In particular, silicon carbide can represent a good alternative to Si in applications like the inner tracking detectors of particle physics experiments . In this work p+/n SiC diodes are exploited as detectors and measurements of their charge collection properties under beta particle radiation from Sr90 source are presented. (literal)
Http://www.cnr.it/ontology/cnr/pubblicazioni.owl#affiliazioni
  • CNR-IMM DIEI and INFN University of Perugia Dipartimento di Fisica- Firenze CEGELY-CNRS Lyon (literal)
Titolo
  • Measurements of Charge Collection Efficiency of p+/n Junction SiC Detectors (literal)
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