Ion implantation p+/n diodes: post-implantation annealing in a Silane ambient in a cold-wall low pressure CVD reactor (Abstract/Poster in atti di convegno)

Type

• Prodotto della ricerca (Classe)
• Abstract/Poster in atti di convegno (Classe)

Label

• Ion implantation p+/n diodes: post-implantation annealing in a Silane ambient in a cold-wall low pressure CVD reactor (Abstract/Poster in atti di convegno) (literal)

Anno

• 2005-01-01T00:00:00+01:00 (literal)

Alternative label

• Bergamini F, Rao S. P, Poggi A, Tamarri F, Saddow SE, Nipoti R (2005)
  Ion implantation p+/n diodes: post-implantation annealing in a Silane ambient in a cold-wall low pressure CVD reactor
  in ICSCRM 2005, Pittsburgh (Pennsylvania, USA)
  (literal)

Http://www.cnr.it/ontology/cnr/pubblicazioni.owl#autori

• Bergamini F, Rao S. P, Poggi A, Tamarri F, Saddow SE, Nipoti R (literal)

Http://www.cnr.it/ontology/cnr/pubblicazioni.owl#altreInformazioni

• This work reports the realization and characterization of 4H-SiC p+/n diodes with the p+ anodes made by Al+ ion implantation at 400°C and post-implantation annealing in silane ambient in a cold-wall low-pressure CVD reactor. The Al depth profile was almost box shaped with a height of 6×1019 cm-3 and a depth of 160 nm. Implant anneals were performed in the temperature range from 1600°C to 1700°C. As the annealing temperature was increased, the silane flow rate was also increased. This annealing process yields a smooth surface with a roughness of the implanted area of 1.7 - 5.3 nm with increasing annealing temperature. The resistivity of the implanted layer, measured at room temperature, decreased for increasing annealing temperatures with a minimum value of 1.40-cm measured for the sample annealed at 1700°C. Considering only the current-voltage characteristic of a diode that could be modeled as an abrupt p/n junction within the frame of the Shockley theory, the diode process yield and the diode leakage current decreased, respectively, from 93% to 47% and from 2×10-7 Acm-2 to 1×10-8 Acm-2 at 100 V reverse bias, for increasing post implantation annealing temperature. (literal)

Http://www.cnr.it/ontology/cnr/pubblicazioni.owl#note

• International Conferenc on Silicon Carbide and Related Materials Pittsburgh, Pennsylvania, USA 18-23 October 2005 (literal)

Http://www.cnr.it/ontology/cnr/pubblicazioni.owl#descrizioneSinteticaDelProdotto

• Poster presentation and abstract publication in the ICSCRM2005 Technical Digest pag. 55. (literal)

Http://www.cnr.it/ontology/cnr/pubblicazioni.owl#affiliazioni

• CNR-IMM of Bologna, via Gobetti 101, 40129 Bologna, Italy Electrical Engineering Dept. 4202 East Fowler Avenue, ENB118 Tampa, Florida 33620-5350, USA (literal)

Titolo

• Ion implantation p+/n diodes: post-implantation annealing in a Silane ambient in a cold-wall low pressure CVD reactor (literal)

Prodotto di

• Sviluppo di tecnologie per una elettronica integrata a base di SiC (MD.P05.003.003) (Modulo)
• Institute for microelectronics and microsystems (IMM) (Istituto)

Autore CNR

• FABRIZIO TAMARRI (Unità di personale interno)
• ANTONELLA POGGI (Unità di personale interno)
• FABIO BERGAMINI (Unità di personale esterno)
• ROBERTA NIPOTI (Unità di personale interno)

Insieme di parole chiave

• Keywords of "Ion implantation p+/n diodes: post-implantation annealing in a Silane ambient in a cold-wall low pressure CVD reactor" (Insieme di parole chiave)

Incoming links:

Prodotto

• Institute for microelectronics and microsystems (IMM) (Istituto)
• Sviluppo di tecnologie per una elettronica integrata a base di SiC (MD.P05.003.003) (Modulo)

Autore CNR di

• ANTONELLA POGGI (Unità di personale interno)
• ROBERTA NIPOTI (Unità di personale interno)
• FABRIZIO TAMARRI (Unità di personale interno)
• FABIO BERGAMINI (Unità di personale esterno)

Insieme di parole chiave di

• Keywords of "Ion implantation p+/n diodes: post-implantation annealing in a Silane ambient in a cold-wall low pressure CVD reactor" (Insieme di parole chiave)