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Room temperature annealing effects on leakage current of ion implanted p+n 4H-SiC diodes (Articolo in rivista)

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Room temperature annealing effects on leakage current of ion implanted p+n 4H-SiC diodes (Articolo in rivista) (literal)

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Moscatelli F, Bergamini F, Poggi A, Passini M, Tamarri F, Bianconi M, Nipoti R (2009)
Room temperature annealing effects on leakage current of ion implanted p+n 4H-SiC diodes
in Materials science forum; TRANS TECH PUBLICATIONS LTD, LAUBLSRUTISTR 24, CH-8717 STAFA-ZURICH (Svizzera)
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Moscatelli F, Bergamini F, Poggi A, Passini M, Tamarri F, Bianconi M, Nipoti R (literal)

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Congresso data OCT 14-19, 2007 Congresso luogo Otsu, Japan Congresso nome International Conference on Silicon Carbide and Related Materials Congresso relazione Contributo Congresso rilevanza Internazionale Curatore/i del volume Suzuki, A; Okumura, H; Kimoto, T; Fuyuki, T; Fukuda, K; Nishizawa, S Titolo del volume SILICON CARBIDE AND RELATED MATERIALS 2007, PTS 1 AND 2 (literal)

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The current-voltage characteristics of Al+ implanted 4H-SiC p+n junctions show an important reduction of leakage currents with diode aging at room temperature. The case of a family of diodes that immediately after manufacture had forward current density increasing from 10-9 to 10 6 A/cm2 when biased from 0 and 2 V, and had a reverse leakage current density of @ 5´10-7 A/cm2 when biased at 100 V, is here presented and discussed. During diode manufacturing a post implantation annealing at 1600 °C for 30 min was followed by a 1000 °C 1 min treatment for metal contacts alloying. After 700 days of storage at room temperature, the diode reverse current density reached an asymptotical value of @ 4´10-11 A/cm2 that is four order of magnitude lower than the initial one. A 430 °C annealing that was made after 366 days is responsible of a decrease of one of these four orders of magnitude, but it does not interrupt the decreasing trend versus increasing time. This same annealing has been effective also for minimizing forward current for bias < 2 V, and sticking the diode turn-on voltage on 1.4 V and the current trend on an ideality factor of 2. These results show that in Al+ implanted 4H-SiC p+n junction there are defects that have an annihilation dynamic at very low temperatures, i.e. room temperature and 430 °C. (literal)

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Titolo

Room temperature annealing effects on leakage current of ion implanted p+n 4H-SiC diodes (literal)

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Abstract

The current-voltage characteristics of Al(+) implanted 4H-SiC p(+)n junctions show an important reduction of leakage currents with diode aging at room temperature. The case of a family of diodes that immediately after manufacture had forward current density increasing from 10(-9) to 10(-6) A/cm(2) when biased from 0 and 2 V, and had a reverse leakage current density of congruent to 5x 10(-7) A/cm(2) when biased at 100 V, is here presented and discussed. During diode manufacturing a post implantation annealing at 1600 degrees C for 30 min was followed by a 1000 degrees C 1 min treatment for metal contacts alloying. After 700 days of storage at room temperature, the diode reverse current density reached an asymptotical value of congruent to 4x 10(-11) A/cm(2) that is four order of magnitude lower than the initial one. A 430 degrees C annealing that was made after 366 days is responsible of a decrease of one of these four orders of magnitude, but it does not interrupt the decreasing trend versus increasing time. This same annealing has been effective also for minimizing forward current for bias < 2 V, and sticking the diode turn-on voltage on 1.4 V and the current trend on an ideality factor of 2. These results show that in Al(+) implanted 4H-SiC p(+)n junction there are defects that have an annihilation dynamic at very low temperatures, i.e. room temperature and 430 degrees C. (literal)

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