Boron Oxide Encapsulated Vertical Bridgman CdZnTe Crystals For X-Ray Detector Applications (Abstract/Poster in atti di convegno)

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  • Boron Oxide Encapsulated Vertical Bridgman CdZnTe Crystals For X-Ray Detector Applications (Abstract/Poster in atti di convegno) (literal)
Anno
  • 2008-01-01T00:00:00+01:00 (literal)
Alternative label
  • Zappettini A.; Zha M.; Calestani D.; Marchini L.; Zanotti L.; Paorici C. (2008)
    Boron Oxide Encapsulated Vertical Bridgman CdZnTe Crystals For X-Ray Detector Applications
    in 1st SIMP-AIC Joint Meeting, Sestri Levante (GE)
    (literal)
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  • Zappettini A.; Zha M.; Calestani D.; Marchini L.; Zanotti L.; Paorici C. (literal)
Http://www.cnr.it/ontology/cnr/pubblicazioni.owl#note
  • In: 1st SIMP-AIC Joint Meeting (Sestri Levante (GE), 7-12 Settembre 2008). Abstract, pp. 189 - 189. Mediaprint Srl, 2008. (literal)
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  • CdZnTe crystals are employed for the production of room temperature X-ray detectors and as substrates for infrared detectors. However, the exploitation of CdZnTe crystals for such applications is still limited by the low single-crystalline device-grade yield of the growth process. The authors had previously shown that is possible to grow CdZnTe crystals in a vertical Bridgman configuration by means of boron oxide encapsulation. Actually, the crystals are fully encapsulated by boron oxide, thus preventing any contact between the growing crystal and the ampoule wall. (literal)
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  • CNR-IMEM, Parma, Dipartimento di Fisica dell'Università di Parma and CNR-IMEM, Parma (literal)
Titolo
  • Boron Oxide Encapsulated Vertical Bridgman CdZnTe Crystals For X-Ray Detector Applications (literal)
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