Formation of Fe-i-Bpairs in silicon at high temperatures (Articolo in rivista)

Type
Label
  • Formation of Fe-i-Bpairs in silicon at high temperatures (Articolo in rivista) (literal)
Anno
  • 2006-01-01T00:00:00+01:00 (literal)
Alternative label
  • Gunnlaugsson, HP; Bharuth-Ram, K; Dietrich, M; Fanciulli, M; Fynbo, HOU; Weyer, G (2006)
    Formation of Fe-i-Bpairs in silicon at high temperatures
    in Hyperfine interactions
    (literal)
Http://www.cnr.it/ontology/cnr/pubblicazioni.owl#autori
  • Gunnlaugsson, HP; Bharuth-Ram, K; Dietrich, M; Fanciulli, M; Fynbo, HOU; Weyer, G (literal)
Pagina inizio
  • 1315 (literal)
Pagina fine
  • 1318 (literal)
Http://www.cnr.it/ontology/cnr/pubblicazioni.owl#numeroVolume
  • 169 (literal)
Rivista
Note
  • ISI Web of Science (WOS) (literal)
Http://www.cnr.it/ontology/cnr/pubblicazioni.owl#affiliazioni
  • Aarhus Univ, Inst Phys & Astron, DK-8000 Aarhus C, Denmark; Univ KwaZulu Natal, Sch Phys, ZA-4041 Durban, South Africa; CERN, Div EP, CH-1211 Geneva 23, Switzerland; INFM, Lab Nazl MDM, I-20041 Agrate Brianza, Italy (literal)
Titolo
  • Formation of Fe-i-Bpairs in silicon at high temperatures (literal)
Abstract
  • We report on the detection of Fe-i-B pairs in heavily B doped silicon using Fe-57 emission Mossbauer spectroscopy following implantation of radioactive Mn-57(+) parent ions (T-1/2 = 1.5 min) at elevated temperatures > 850 K. The Fe-i-B pairs are formed upon the dissociation of Fe-i-V pairs during the lifetime of the Mossbauer state (T-1/2 = 100 ns). The resulting free interstitial Fe-i diffuses over sufficiently large distances during the lifetime of the Mossbauer state to encounter a substitutional B impurity atom, forming Fe-i-B pairs, which are stable up to similar to 1,050 K on that time scale. (literal)
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