Detection of terahertz radiation by AlGaN/GaN field-effect transistors (Comunicazione a convegno)

Type
Label
  • Detection of terahertz radiation by AlGaN/GaN field-effect transistors (Comunicazione a convegno) (literal)
Anno
  • 2009-01-01T00:00:00+01:00 (literal)
Alternative label
  • Ortolani, M.; Di Gaspare, A.; Giovine, E.; Evangelisti, F.; Foglietti, V.; Doria, A.; Gallerano, G.P.; Giovenale, E.; Messina, G.; Spassovsky, I.; Coppa, A.; Lanzieri, C.; Peroni, M.; Cetronio, A.; Sakowicz, M.; Knap, W. (2009)
    Detection of terahertz radiation by AlGaN/GaN field-effect transistors
    in IEEE Conf. Proc. of 34th International Conference on Infrared, Millimeter, and Terahertz Waves, 2009. IRMMW-THz 2009., Busan, SOUTH KOREA, SEP 21-25, 2009
    (literal)
Http://www.cnr.it/ontology/cnr/pubblicazioni.owl#autori
  • Ortolani, M.; Di Gaspare, A.; Giovine, E.; Evangelisti, F.; Foglietti, V.; Doria, A.; Gallerano, G.P.; Giovenale, E.; Messina, G.; Spassovsky, I.; Coppa, A.; Lanzieri, C.; Peroni, M.; Cetronio, A.; Sakowicz, M.; Knap, W. (literal)
Pagina inizio
  • 315 (literal)
Pagina fine
  • 316 (literal)
Http://www.cnr.it/ontology/cnr/pubblicazioni.owl#titoloVolume
  • 2009 34TH INTERNATIONAL CONFERENCE ON INFRARED, MILLIMETER, AND TERAHERTZ WAVES (literal)
Http://www.cnr.it/ontology/cnr/pubblicazioni.owl#numeroVolume
  • 1-2 (literal)
Note
  • ISI Web of Science (WOS) (literal)
Http://www.cnr.it/ontology/cnr/pubblicazioni.owl#affiliazioni
  • CNR Ist Foton & Nanotecnol, Via Cineto Romano 42, I-00156 Rome, Italy (literal)
Titolo
  • Detection of terahertz radiation by AlGaN/GaN field-effect transistors (literal)
Http://www.cnr.it/ontology/cnr/pubblicazioni.owl#isbn
  • 978-1-4244-5416-7 (literal)
Http://www.cnr.it/ontology/cnr/pubblicazioni.owl#autoriVolume
  • IEEE (literal)
Abstract
  • High electron mobility transistors can work as room-temperature direct detectors of radiation at frequency much higher than their cutoff frequency. One open issue is how the radiation couples to the sub-wavelength transistor channel. Here, we studied the coupling of radiation to an AlGaN/GaN transistor with cut-off frequency of 30 GEL Local irradiation with a Free Electron Laser source at 0.15 THz allowed us to selectively couple the signal to the channel through one transistor terminal at a time. Far-field experiments at 0.15 - 0.94 THz were also performed in order to study the nonlinear properties of the transistor channel. (literal)
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