Sol-Gel Erbium-Doped Silica-Hafnia Planar and Channel Waveguides (Comunicazione a convegno)

Type
Label
  • Sol-Gel Erbium-Doped Silica-Hafnia Planar and Channel Waveguides (Comunicazione a convegno) (literal)
Anno
  • 2003-01-01T00:00:00+01:00 (literal)
Http://www.cnr.it/ontology/cnr/pubblicazioni.owl#doi
  • 10.1117/12.478340 (literal)
Alternative label
  • R.R. Gonçalves, G. Carturan, L. Zampedri, M. Ferrari, C. Armellini, A. Chiasera, M. Matterelli, E. Moser, M. Montagna, G.C. Righini, S. Pelli, G.Nunzi Conti, S.J.L. Ribeiro, Y. Messaddeq, A. Minotti, V. Foglietti, H. Portales (2003)
    Sol-Gel Erbium-Doped Silica-Hafnia Planar and Channel Waveguides
    in Photonic West 2003, San Jose USA, February 2-7, 2013
    (literal)
Http://www.cnr.it/ontology/cnr/pubblicazioni.owl#autori
  • R.R. Gonçalves, G. Carturan, L. Zampedri, M. Ferrari, C. Armellini, A. Chiasera, M. Matterelli, E. Moser, M. Montagna, G.C. Righini, S. Pelli, G.Nunzi Conti, S.J.L. Ribeiro, Y. Messaddeq, A. Minotti, V. Foglietti, H. Portales (literal)
Pagina inizio
  • 111 (literal)
Pagina fine
  • 120 (literal)
Http://www.cnr.it/ontology/cnr/pubblicazioni.owl#numeroVolume
  • 4990 (literal)
Rivista
Note
  • Scopu (literal)
Http://www.cnr.it/ontology/cnr/pubblicazioni.owl#affiliazioni
  • Dipto. di Ingegneria dei Materiali, Università di Trento, Via Mesiano 77, 1-38050 Trento, Italy; CNR-IFN, Ist. di Fotonica e Nanotecnologie, via Sommarive 14, 1-38050 Povo, Trento, Italy; Dipartimento di Fisica, INFM, Università di Trento, via Sommarive 14, 1-38050 Povo, Trento, Italy; CNR-IFAC, Ist. di Fis. Applicata Nello Carrara, via Panciatichi 64, 1-50127 Firenze, Italy; Institute of Chemistry, UNESP, P.O.Box 355, 14801-970 Araraquara, SP, Brazil; CNR, Ist. di Fotonica e Nanotecnologie, MEMS Group, Via Cineto Romano 42, I-00156 Roma, Italy; Dipartimento di Fisica, INFM, Università di Padova, via Marzolo 8, 1-35131 Padova, Italy (literal)
Titolo
  • Sol-Gel Erbium-Doped Silica-Hafnia Planar and Channel Waveguides (literal)
Abstract
  • Erbium activated SiO2 -HfO2 planar waveguides, doped with Er3+ concentrations ranging from 0.01 to 4 mol%, were prepared by sol-gel method. The films were deposited on v-SiO2 and silica-on-silicon substrates using dip-coating technique. The waveguides show high densification degree, effective intermingling of the two film components, and uniform surface morphology. The waveguide deposited on silica-on-silicon substrates shows one single propagation mode at 1.5?m, with a confinement coefficient of 0.81 and an attenuation coefficient of 0.8 dB/cm at 632.8nm. Emission in the C-telecommunication band was observed at room temperature for all the samples upon continuouswave excitation at 980 nm or 514.5 nm. The shape of the emission band corresponding to the 4I13/2 -> 4I15/2 transition is found to be almost independent both on erbium content and excitation wavelength, with a FWHM between 44 and 48 nm. The 4I13/2 level decay curves presented a single-exponential profile, with a lifetime ranging between 1.1 - 6.6 ms, depending on the erbium concentration. Infrared to visible upconversion luminescence upon continuous-wave excitation at 980 nm was observed for all the samples. Channel waveguide in rib configuration was obtained by etching the active film in order to have a well confined mode at 1.5 ?m. (literal)
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