Nitrogen-induced hindering of in incorporation in InGaAsN (Articolo in rivista)

Type
Label
  • Nitrogen-induced hindering of in incorporation in InGaAsN (Articolo in rivista) (literal)
Anno
  • 2006-01-01T00:00:00+01:00 (literal)
Http://www.cnr.it/ontology/cnr/pubblicazioni.owl#doi
  • 10.1063/1.2193988 (literal)
Alternative label
  • Rubini, S; Bais, G; Cristofoli, A; Piccin, M; Duca, R; Nacci, C; Modesti, S; Carlino, E; Martelli, F; Franciosi, A; Bisognin, G; De Salvador, D; Schiavuta, P; Berti, M; Drigo, AV (2006)
    Nitrogen-induced hindering of in incorporation in InGaAsN
    in Applied physics letters
    (literal)
Http://www.cnr.it/ontology/cnr/pubblicazioni.owl#autori
  • Rubini, S; Bais, G; Cristofoli, A; Piccin, M; Duca, R; Nacci, C; Modesti, S; Carlino, E; Martelli, F; Franciosi, A; Bisognin, G; De Salvador, D; Schiavuta, P; Berti, M; Drigo, AV (literal)
Pagina inizio
  • 141923 (literal)
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  • 88 (literal)
Rivista
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  • 3 (literal)
Note
  • ISI Web of Science (WOS) (literal)
Http://www.cnr.it/ontology/cnr/pubblicazioni.owl#affiliazioni
  • CNR, INFM, Lab Nazl TASC, I-34012 Trieste, Italy; Univ Trieste, Ctr Excellence Nanostruct Mat, I-34127 Trieste, Italy; Univ Padua, Dipartimento Fis, I-35131 Padua, Italy; INFM, I-35131 Padua, Italy; Univ Trieste, Dipartmento Fis, I-34127 Trieste, Italy (literal)
Titolo
  • Nitrogen-induced hindering of in incorporation in InGaAsN (literal)
Abstract
  • We compare the In content of quaternary InxGa1-xAs1-yNy and ternary InxGa1-xAs layers grown by plasma-assisted molecular beam epitaxy in similar conditions. Indium incorporation is found to decrease monotonically with increasing nitrogen content. The magnitude of the reduction strongly depends on N concentration, reaching about 20% of the nominal In content for N concentrations of y=0.044. (c) 2006 American Institute of Physics. (literal)
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