Apparent critical thickness versus temperature for InAs quantum dot growth on GaAs(001) (Articolo in rivista)

Type
Label
  • Apparent critical thickness versus temperature for InAs quantum dot growth on GaAs(001) (Articolo in rivista) (literal)
Anno
  • 2006-01-01T00:00:00+01:00 (literal)
Http://www.cnr.it/ontology/cnr/pubblicazioni.owl#doi
  • 10.1063/1.2189915 (literal)
Alternative label
  • Patella, F *; Arciprete, F *; Fanfoni, M *; Balzarotti, A *; Placidi, E ** (2006)
    Apparent critical thickness versus temperature for InAs quantum dot growth on GaAs(001)
    in Applied physics letters
    (literal)
Http://www.cnr.it/ontology/cnr/pubblicazioni.owl#autori
  • Patella, F *; Arciprete, F *; Fanfoni, M *; Balzarotti, A *; Placidi, E ** (literal)
Http://www.cnr.it/ontology/cnr/pubblicazioni.owl#numeroVolume
  • 88 (literal)
Rivista
Note
  • ISI Web of Science (WOS) (literal)
Http://www.cnr.it/ontology/cnr/pubblicazioni.owl#affiliazioni
  • * Univ Roma Tor Vergata, Dipartimento Fis, I-00133 Rome, Italy; ** CNR, Ist Nazl Fis Mat, Rome, Italy (literal)
Titolo
  • Apparent critical thickness versus temperature for InAs quantum dot growth on GaAs(001) (literal)
Abstract
  • We studied the temperature dependence of the two-dimensional to three-dimensional growth transition in InAs/GaAs(001) heteroepitaxy by means of reflection high energy electron diffraction and atomic force microscopy. The observed shift of the transition to higher InAs deposition times, at temperatures above 500 degrees C, is not a change of critical thickness for islanding, which instead, is constant in the 450-560 degrees C range. Consequently, In-Ga intermixing and surface and interface strain have a negligible dependence on temperature in this range. (literal)
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