Fluorine incorporation in preamorphized silicon (Articolo in rivista)

Type
Label
  • Fluorine incorporation in preamorphized silicon (Articolo in rivista) (literal)
Anno
  • 2006-01-01T00:00:00+01:00 (literal)
Http://www.cnr.it/ontology/cnr/pubblicazioni.owl#doi
  • 10.1116/1.2127934 (literal)
Alternative label
  • Impellizzeri, G; Mirabella, S; Bruno, E; Priolo, F; Napolitani, E; Carnera, A (2006)
    Fluorine incorporation in preamorphized silicon
    in Journal of vacuum science & technology. B, Microelectronics and nanometer structures
    (literal)
Http://www.cnr.it/ontology/cnr/pubblicazioni.owl#autori
  • Impellizzeri, G; Mirabella, S; Bruno, E; Priolo, F; Napolitani, E; Carnera, A (literal)
Pagina inizio
  • 433 (literal)
Pagina fine
  • 436 (literal)
Http://www.cnr.it/ontology/cnr/pubblicazioni.owl#numeroVolume
  • 24 (literal)
Rivista
Http://www.cnr.it/ontology/cnr/pubblicazioni.owl#pagineTotali
  • 4 (literal)
Note
  • ISI Web of Science (WOS) (literal)
Http://www.cnr.it/ontology/cnr/pubblicazioni.owl#affiliazioni
  • Univ Catania, INFM, MATIS, I-95123 Catania, Italy; Univ Catania, Dipartimento Fis & Astron, I-95123 Catania, Italy; Univ Padua, INFM, MATIS, I-35131 Padua, Italy; Univ Padua, Dipartimento Fis, I-35131 Padua, Italy (literal)
Titolo
  • Fluorine incorporation in preamorphized silicon (literal)
Abstract
  • We studied the effect of implanted fluorine on B-doped silicon formed by Si preamorphization, solid phase epitaxy (SPE) regrowth and post-SPE thermal treatments. We showed that the fluorine is an efficient diffusion inhibitor for boron, revealing the crucial importance of F implementation in the future generation devices. In samples doped with B we observed an anomalous F accumulation at the dopant implantation peak. Since the physical mechanisms driving these phenomena are not yet well understood, we investigated the effect of the presence of B and/or As on the F incorporation during the SPE process at 580 degrees C. By using As coimplantation (thus modifying the SPE rate) we demonstrated that the above mentioned increased F incorporation is due to a kinetic effect, related to the SPE rate modification by doping, while a F-B chemical bonding is refused. These data shade new light upon the mechanism responsible for B diffusion reduction by F. (c) 2006 American Vacuum Society (literal)
Prodotto di
Autore CNR
Insieme di parole chiave

Incoming links:


Autore CNR di
Prodotto
Http://www.cnr.it/ontology/cnr/pubblicazioni.owl#rivistaDi
Insieme di parole chiave di
data.CNR.it