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Theoretical investigation of Schottky-barrier diode noise performance in external resonant circuits (Articolo in rivista)
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- Theoretical investigation of Schottky-barrier diode noise performance in external resonant circuits (Articolo in rivista) (literal)
- Anno
- 2006-01-01T00:00:00+01:00 (literal)
- Alternative label
Shiktorov, P; Starikov, E; Gruzinskis, V; Perez, S; Gonzalez, T; Reggiani, L; Varani, L; Vassiere, JC (2006)
Theoretical investigation of Schottky-barrier diode noise performance in external resonant circuits
in Semiconductor science and technology (Print)
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- Shiktorov, P; Starikov, E; Gruzinskis, V; Perez, S; Gonzalez, T; Reggiani, L; Varani, L; Vassiere, JC (literal)
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- ISI Web of Science (WOS) (literal)
- Http://www.cnr.it/ontology/cnr/pubblicazioni.owl#affiliazioni
- Semicond Phys Inst, LT-01108 Vilnius, Lithuania; Univ Salamanca, Dept Fis Aplicada, E-37008 Salamanca, Spain; Univ Lecce, INFM, Natl Nanotechnol Lab, CNISM,Dipartimento Ingn Innovaz, I-73100 Lecce, Italy; Univ Montpellier 2, CNRS UMR 5507, Ctr Elect & Microoptoelect Montpellier, CEM2, F-34095 Montpellier 5, France (literal)
- Titolo
- Theoretical investigation of Schottky-barrier diode noise performance in external resonant circuits (literal)
- Abstract
- We report Monte Carlo simulations of electronic noise in heavily doped nanometric GaAs Schottky-barrier diodes (SBDs) recently proposed as promising devices for THz applications. We consider a SBD operating in series with a parallel output resonant circuit when a high-frequency large-signal voltage is applied to the whole system. Significant modifications of the noise spectrum with respect to the diode subjected to a constant applied voltage are found to occur in the THz-region. To interpret such behaviour, we have developed a simple analytical approach based on the static I-V and C-V relations as well as on the series resistance of the SBD. (literal)
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