Theoretical investigation of Schottky-barrier diode noise performance in external resonant circuits (Articolo in rivista)

Type
Label
  • Theoretical investigation of Schottky-barrier diode noise performance in external resonant circuits (Articolo in rivista) (literal)
Anno
  • 2006-01-01T00:00:00+01:00 (literal)
Alternative label
  • Shiktorov, P; Starikov, E; Gruzinskis, V; Perez, S; Gonzalez, T; Reggiani, L; Varani, L; Vassiere, JC (2006)
    Theoretical investigation of Schottky-barrier diode noise performance in external resonant circuits
    in Semiconductor science and technology (Print)
    (literal)
Http://www.cnr.it/ontology/cnr/pubblicazioni.owl#autori
  • Shiktorov, P; Starikov, E; Gruzinskis, V; Perez, S; Gonzalez, T; Reggiani, L; Varani, L; Vassiere, JC (literal)
Pagina inizio
  • 550 (literal)
Pagina fine
  • 557 (literal)
Http://www.cnr.it/ontology/cnr/pubblicazioni.owl#numeroVolume
  • 21 (literal)
Rivista
Note
  • ISI Web of Science (WOS) (literal)
Http://www.cnr.it/ontology/cnr/pubblicazioni.owl#affiliazioni
  • Semicond Phys Inst, LT-01108 Vilnius, Lithuania; Univ Salamanca, Dept Fis Aplicada, E-37008 Salamanca, Spain; Univ Lecce, INFM, Natl Nanotechnol Lab, CNISM,Dipartimento Ingn Innovaz, I-73100 Lecce, Italy; Univ Montpellier 2, CNRS UMR 5507, Ctr Elect & Microoptoelect Montpellier, CEM2, F-34095 Montpellier 5, France (literal)
Titolo
  • Theoretical investigation of Schottky-barrier diode noise performance in external resonant circuits (literal)
Abstract
  • We report Monte Carlo simulations of electronic noise in heavily doped nanometric GaAs Schottky-barrier diodes (SBDs) recently proposed as promising devices for THz applications. We consider a SBD operating in series with a parallel output resonant circuit when a high-frequency large-signal voltage is applied to the whole system. Significant modifications of the noise spectrum with respect to the diode subjected to a constant applied voltage are found to occur in the THz-region. To interpret such behaviour, we have developed a simple analytical approach based on the static I-V and C-V relations as well as on the series resistance of the SBD. (literal)
Prodotto di
Autore CNR
Insieme di parole chiave

Incoming links:


Autore CNR di
Prodotto
Http://www.cnr.it/ontology/cnr/pubblicazioni.owl#rivistaDi
Insieme di parole chiave di
data.CNR.it