Low-temperature magnetization of (Ga,Mn)As semiconductors (Articolo in rivista)

Type
Label
  • Low-temperature magnetization of (Ga,Mn)As semiconductors (Articolo in rivista) (literal)
Anno
  • 2006-01-01T00:00:00+01:00 (literal)
Alternative label
  • Jungwirth, T; Masek, J; Wang, KY; Edmonds, KW; Sawicki, M; Polini, M; Sinova, J; MacDonald, AH; Campion, RP; Zhao, LX; Farley, NRS; Johal, TK; van der Laan, G; Foxon, CT; Gallagher, BL (2006)
    Low-temperature magnetization of (Ga,Mn)As semiconductors
    (literal)
Http://www.cnr.it/ontology/cnr/pubblicazioni.owl#autori
  • Jungwirth, T; Masek, J; Wang, KY; Edmonds, KW; Sawicki, M; Polini, M; Sinova, J; MacDonald, AH; Campion, RP; Zhao, LX; Farley, NRS; Johal, TK; van der Laan, G; Foxon, CT; Gallagher, BL (literal)
Http://www.cnr.it/ontology/cnr/pubblicazioni.owl#numeroVolume
  • 73 (literal)
Note
  • ISI Web of Science (WOS) (literal)
Http://www.cnr.it/ontology/cnr/pubblicazioni.owl#affiliazioni
  • ASCR, Inst Phys, Prague 16253 6, Czech Republic; Univ Nottingham, Sch Phys & Astron, Nottingham NG7 2RD, England; ASCR, Inst Phys, Prague 18221 8, Czech Republic; Polish Acad Sci, Inst Phys, PL-02668 Warsaw, Poland; INFM, CNR, NEST, I-56126 Pisa, Italy; Scuola Normale Super Pisa, I-56126 Pisa, Italy; Texas A&M Univ, Dept Phys, College Stn, TX 77843 USA; Univ Texas, Dept Phys, Austin, TX 78712 USA; CCLRC, Daresbury Lab, Warrington WA4 4AD, Cheshire, England (literal)
Titolo
  • Low-temperature magnetization of (Ga,Mn)As semiconductors (literal)
Abstract
  • We report on a comprehensive study of the ferromagnetic moment per Mn atom in (Ga,Mn)As ferromagnetic semiconductors. Theoretical discussion is based on microscopic calculations and on an effective model of Mn local moments antiferromagnetically coupled to valence band hole spins. The validity of the effective model over the range of doping studied is assessed by comparing with microscopic tight-binding/coherent-potential approximation calculations. Using the virtual crystal k center dot p model for hole states, we evaluate the zero-temperature mean-field contributions to the magnetization from the hole kinetic and exchange energies, and magnetization suppression due to quantum fluctuations of Mn moment orientations around their mean-field ground state values. Experimental low-temperature ferromagnetic moments per Mn are obtained by superconducting quantum interference device and x-ray magnetic circular dichroism measurements in a series of (Ga,Mn)As semiconductors with nominal Mn doping ranging from similar to 2 to 8%. Hall measurements in as-grown and annealed samples are used to estimate the number of uncompensated substitutional Mn moments. Based on our comparison between experiment and theory we conclude that all these Mn moments in high quality (Ga,Mn)As materials have nearly parallel ground state alignment. (literal)
Prodotto di
Autore CNR
Insieme di parole chiave

Incoming links:


Autore CNR di
Prodotto
Insieme di parole chiave di
data.CNR.it