DOPANT DIFFUSION

Label

• DOPANT DIFFUSION (literal)

Membro di

• Parole chiave di "Investigation of two dimensional diffusion of the self-interstitials in crystalline Si at 800 °C and at room temperature" (Insieme di parole chiave)
• Parole chiave di "New insight on the interaction and diffusion properties of ion beam injected self-interstitials in crystalline silicon" (Insieme di parole chiave)
• Keywords of "Substitutional B in Si: Accurate lattice parameter determination" (Insieme di parole chiave)
• Parole chiave di "Two dimensional interstitial diffusion in mesoscopic structures" (Insieme di parole chiave)
• Parole chiave di "Investigation of two-dimensional diffusion of the self-interstitials in crystalline silicon at 800 degrees C and at room temperature" (Insieme di parole chiave)
• Keywords of "He induced nanovoids for point-defect engineering in B-implanted crystalline Si" (Insieme di parole chiave)
• Parole chiave di "Mechanism of boron diffusion in amorphous silicon" (Insieme di parole chiave)
• Keywords of "High-resolution X-ray diffraction by end of range defects in self-amorphized Ge" (Insieme di parole chiave)
• Parole chiave di "Enhanced boron diffusion in excimer laser preannealed Si" (Insieme di parole chiave)
• Parole chiave di "Direct observation of two-dimensional diffusion of the self-interstitials in crystalline Si" (Insieme di parole chiave)
• Parole chiave di "Room-temperature B off-lattice displacement and electrical deactivation induced by H and He implantation" (Insieme di parole chiave)

Value

• DOPANT DIFFUSION (literal)

Incoming links:

Ha membro

• Parole chiave di "Room-temperature B off-lattice displacement and electrical deactivation induced by H and He implantation" (Insieme di parole chiave)
• Parole chiave di "Investigation of two dimensional diffusion of the self-interstitials in crystalline Si at 800 °C and at room temperature" (Insieme di parole chiave)
• Parole chiave di "Two dimensional interstitial diffusion in mesoscopic structures" (Insieme di parole chiave)
• Keywords of "He induced nanovoids for point-defect engineering in B-implanted crystalline Si" (Insieme di parole chiave)
• Parole chiave di "Direct observation of two-dimensional diffusion of the self-interstitials in crystalline Si" (Insieme di parole chiave)
• Keywords of "Substitutional B in Si: Accurate lattice parameter determination" (Insieme di parole chiave)
• Parole chiave di "Investigation of two-dimensional diffusion of the self-interstitials in crystalline silicon at 800 degrees C and at room temperature" (Insieme di parole chiave)
• Keywords of "High-resolution X-ray diffraction by end of range defects in self-amorphized Ge" (Insieme di parole chiave)
• Parole chiave di "Mechanism of boron diffusion in amorphous silicon" (Insieme di parole chiave)
• Parole chiave di "Enhanced boron diffusion in excimer laser preannealed Si" (Insieme di parole chiave)
• Parole chiave di "New insight on the interaction and diffusion properties of ion beam injected self-interstitials in crystalline silicon" (Insieme di parole chiave)