interface states
- Label
- interface states (literal)
- Membro di
- Keywords of "Electrical Properties of Ni/GaN Schottky Contacts on High-temperature Annealed GaN Surfaces" (Insieme di parole chiave)
- Parole chiave di "Investigation on the Use of Nitrogen Implantation to Improve the Performance of N-Channel Enhancement 4H-SiC MOSFETÂ’s" (Insieme di parole chiave)
- Parole chiave di "Electrical and structural properties of ultrathin SiON films on Si prepared by plasma nitridation" (Insieme di parole chiave)
- Parole chiave di "Understanding the role of tunneling barriers in organic spin valves by hard x-ray photoelectron spectroscopy" (Insieme di parole chiave)
- Keywords of "Analysis of the Electron Traps at the 4H-SiC/SiO(2) Interface of a Gate Oxide Obtained by Wet Oxidation of a Nitrogen pre-Implanted Layer" (Insieme di parole chiave)
- Parole chiave di "Non-nitridated oxides: abnormal behaviour of n-4H-SiC/SiO2 capacitors at low temperature caused by near interface states" (Insieme di parole chiave)
- Keywords of "The influence of excess nitrogen, on the electrical properties of the 4H-SiC/SiO(2) interface" (Insieme di parole chiave)
- Value
- interface states (literal)
Incoming links:
- Ha membro
- Parole chiave di "Non-nitridated oxides: abnormal behaviour of n-4H-SiC/SiO2 capacitors at low temperature caused by near interface states" (Insieme di parole chiave)
- Keywords of "Electrical Properties of Ni/GaN Schottky Contacts on High-temperature Annealed GaN Surfaces" (Insieme di parole chiave)
- Parole chiave di "Investigation on the Use of Nitrogen Implantation to Improve the Performance of N-Channel Enhancement 4H-SiC MOSFETÂ’s" (Insieme di parole chiave)
- Parole chiave di "Electrical and structural properties of ultrathin SiON films on Si prepared by plasma nitridation" (Insieme di parole chiave)
- Keywords of "The influence of excess nitrogen, on the electrical properties of the 4H-SiC/SiO(2) interface" (Insieme di parole chiave)
- Parole chiave di "Understanding the role of tunneling barriers in organic spin valves by hard x-ray photoelectron spectroscopy" (Insieme di parole chiave)
- Keywords of "Analysis of the Electron Traps at the 4H-SiC/SiO(2) Interface of a Gate Oxide Obtained by Wet Oxidation of a Nitrogen pre-Implanted Layer" (Insieme di parole chiave)
