wide band gap semiconductors

Label

• wide band gap semiconductors (literal)

Membro di

• Parole chiave di "Current analysis of ion implanted p+/n 4H-SiC junctions: post-implantation annealing in Ar ambient" (Insieme di parole chiave)
• Keywords of "Interfacial properties of SiO2 grown on 4H-SiC: comparison between N2O and Wet O2 oxidation ambient" (Insieme di parole chiave)
• Parole chiave di "Ion Implanted p+/n 4H-SiC Junctions: effect of the Heating Rate during Post Implantation Annealing" (Insieme di parole chiave)
• Parole chiave di "Advances in selective doping of SiC via ion implantation" (Insieme di parole chiave)
• Parole chiave di "Room temperature annealing effects on leakage current of ion implanted p+n 4H-SiC diodes" (Insieme di parole chiave)
• Parole chiave di "Correlation between current transport and defects in n+/p 6H-SiC diodes" (Insieme di parole chiave)
• Parole chiave di "Interfacial properties of SiO2 grown on 4H-SiC: comparison between N2O and Wet O2 oxidation ambient" (Insieme di parole chiave)
• Keywords of "The magnetization in (Zn1-xCox)Ga2O4 (x=0.05, 0.10, and 0.20) diluted magnetic semiconductors depending on Co atoms in tetrahedral and octahedral sites" (Insieme di parole chiave)
• Keywords of "Silicon Carbide and Related Materials 2004" (Insieme di parole chiave)
• Parole chiave di "K-band Diamond MESFETs for RFIC technology" (Insieme di parole chiave)
• Keywords of "Current analysis of ion implanted p+/n 4H-SiC junctions: post-implantation annealing in Ar ambient" (Insieme di parole chiave)

Value

• wide band gap semiconductors (literal)

Incoming links:

Ha membro

• Parole chiave di "Room temperature annealing effects on leakage current of ion implanted p+n 4H-SiC diodes" (Insieme di parole chiave)
• Parole chiave di "Correlation between current transport and defects in n+/p 6H-SiC diodes" (Insieme di parole chiave)
• Keywords of "The magnetization in (Zn1-xCox)Ga2O4 (x=0.05, 0.10, and 0.20) diluted magnetic semiconductors depending on Co atoms in tetrahedral and octahedral sites" (Insieme di parole chiave)
• Parole chiave di "Advances in selective doping of SiC via ion implantation" (Insieme di parole chiave)
• Keywords of "Current analysis of ion implanted p+/n 4H-SiC junctions: post-implantation annealing in Ar ambient" (Insieme di parole chiave)
• Parole chiave di "Interfacial properties of SiO2 grown on 4H-SiC: comparison between N2O and Wet O2 oxidation ambient" (Insieme di parole chiave)
• Keywords of "Silicon Carbide and Related Materials 2004" (Insieme di parole chiave)
• Keywords of "Interfacial properties of SiO2 grown on 4H-SiC: comparison between N2O and Wet O2 oxidation ambient" (Insieme di parole chiave)
• Parole chiave di "Current analysis of ion implanted p+/n 4H-SiC junctions: post-implantation annealing in Ar ambient" (Insieme di parole chiave)
• Parole chiave di "Ion Implanted p+/n 4H-SiC Junctions: effect of the Heating Rate during Post Implantation Annealing" (Insieme di parole chiave)
• Parole chiave di "K-band Diamond MESFETs for RFIC technology" (Insieme di parole chiave)