silicon carbide

Label

• silicon carbide (literal)

Membro di

• Keywords of "Simulation and exerimental results on the forward J-V characteristic of Al implanted 4H-SiC p-i-n diodes" (Insieme di parole chiave)
• Keywords of "Transport localization in heterogeneous Schottky barriers of quantum-defined metal films" (Insieme di parole chiave)
• Keywords of "Al+ Implanted 4H-SiC p(+)-i-n Diodes: Forward Current Negative Temperature Coefficient" (Insieme di parole chiave)
• Keywords of "MOS capacitors obtained by wet oxidation of n-type 4H-SiC pre-implanted with Nitrogen" (Insieme di parole chiave)
• Keywords of "Effects of heating ramp rates on the characteristics of AI implanted 4H-SiC junctions" (Insieme di parole chiave)
• Keywords of "Synthesis and characterization of 3C-SiC nanowires" (Insieme di parole chiave)
• Keywords of "SiC synthesis by fullerene free jets on Si(111) at low temperatures" (Insieme di parole chiave)
• Parole chiave di "Study on the Heat Transfer Capability of Silicon Carbide - Ethylene Glycol Nanofluid" (Insieme di parole chiave)
• Parole chiave di "Ultra Fast High Temperature Microwave Annealing of Ion Implanted Large Bandgap Semiconductors" (Insieme di parole chiave)
• Keywords of "Silicon carbide reactor" (Insieme di parole chiave)
• Keywords of "J-V characteristics of Al+ ion implanted p(+)/n 4H-SiC diodes annealed in silane ambient at 1600 degrees C" (Insieme di parole chiave)
• Keywords of "Electrical Characterization of Al Implanted 4H-SiC Layers by Four Point Probe and Scanning Capacitance Microscopy" (Insieme di parole chiave)
• Parole chiave di "Clustering of gold on 6H-SiC and local nanoscale electrical properties" (Insieme di parole chiave)
• Parole chiave di "SiC Synthesis by fullerence free jets on Si(111) at low temperatures" (Insieme di parole chiave)
• Keywords of "Silicon carbide and its use as a radiation detector material" (Insieme di parole chiave)
• Keywords of "Epitaxy of nanocrystalline Silicon Carbide on Si(111) at Room Temperature" (Insieme di parole chiave)
• Parole chiave di "Analysis of electron traps at the 4H-SiC/SiO2 interface; influence by nitrogen implantation prior to wet oxidation" (Insieme di parole chiave)
• Parole chiave di "Synthesis of SiC on Si(111) at moderate temperatures by supersonic C-60 beams" (Insieme di parole chiave)
• Keywords of "TEM and SEM-CL studies of SiC Nanowires" (Insieme di parole chiave)
• Parole chiave di "Characterization of energy levels related to impurities in epitaxial 4H-SiC ion implanted p(+)n junctions" (Insieme di parole chiave)
• Parole chiave di "Emission enhancement of SiC/SiO2 core/shell nanowires induced by the oxide shell" (Insieme di parole chiave)
• Keywords of "3C-SiC nanowires luminescence enhancement by coating with a conformal oxides layer" (Insieme di parole chiave)
• Parole chiave di "Radiation hardness after very high neutron irradiation of minimum ionizing particle detectors based on 4H-SiC p(+)n junctions" (Insieme di parole chiave)
• Keywords of "Electrical and Optical Characterisation of Silicon Nanocrystals Embedded in SiC" (Insieme di parole chiave)
• Parole chiave di "Experimental characterization and numerical analysis of the 4H-SiC p-i-n diodes static and transient behaviour" (Insieme di parole chiave)
• Parole chiave di "Nanoimaging in SiC and Related Materials: Beyond Surface Morphology to Charge Transport and Physical Parameters Mapping" (Insieme di parole chiave)
• Parole chiave di "Fully implanted vertical p-i-n diodes using high-purity semi-insulating 4H-SiC wafers" (Insieme di parole chiave)
• Keywords of "Improvements offered by coprecipitation of sintering additives on ultra-fine SiC materials" (Insieme di parole chiave)

Value

• silicon carbide (literal)

Incoming links:

Ha membro

• Parole chiave di "Radiation hardness after very high neutron irradiation of minimum ionizing particle detectors based on 4H-SiC p(+)n junctions" (Insieme di parole chiave)
• Parole chiave di "Characterization of energy levels related to impurities in epitaxial 4H-SiC ion implanted p(+)n junctions" (Insieme di parole chiave)
• Parole chiave di "Clustering of gold on 6H-SiC and local nanoscale electrical properties" (Insieme di parole chiave)
• Keywords of "3C-SiC nanowires luminescence enhancement by coating with a conformal oxides layer" (Insieme di parole chiave)
• Keywords of "Simulation and exerimental results on the forward J-V characteristic of Al implanted 4H-SiC p-i-n diodes" (Insieme di parole chiave)
• Keywords of "MOS capacitors obtained by wet oxidation of n-type 4H-SiC pre-implanted with Nitrogen" (Insieme di parole chiave)
• Parole chiave di "Nanoimaging in SiC and Related Materials: Beyond Surface Morphology to Charge Transport and Physical Parameters Mapping" (Insieme di parole chiave)
• Parole chiave di "Experimental characterization and numerical analysis of the 4H-SiC p-i-n diodes static and transient behaviour" (Insieme di parole chiave)
• Keywords of "Electrical Characterization of Al Implanted 4H-SiC Layers by Four Point Probe and Scanning Capacitance Microscopy" (Insieme di parole chiave)
• Keywords of "Improvements offered by coprecipitation of sintering additives on ultra-fine SiC materials" (Insieme di parole chiave)
• Keywords of "Silicon carbide reactor" (Insieme di parole chiave)
• Parole chiave di "Ultra Fast High Temperature Microwave Annealing of Ion Implanted Large Bandgap Semiconductors" (Insieme di parole chiave)
• Parole chiave di "Analysis of electron traps at the 4H-SiC/SiO2 interface; influence by nitrogen implantation prior to wet oxidation" (Insieme di parole chiave)
• Keywords of "SiC synthesis by fullerene free jets on Si(111) at low temperatures" (Insieme di parole chiave)
• Keywords of "Electrical and Optical Characterisation of Silicon Nanocrystals Embedded in SiC" (Insieme di parole chiave)
• Parole chiave di "SiC Synthesis by fullerence free jets on Si(111) at low temperatures" (Insieme di parole chiave)
• Keywords of "Synthesis and characterization of 3C-SiC nanowires" (Insieme di parole chiave)
• Keywords of "Silicon carbide and its use as a radiation detector material" (Insieme di parole chiave)
• Keywords of "Epitaxy of nanocrystalline Silicon Carbide on Si(111) at Room Temperature" (Insieme di parole chiave)
• Parole chiave di "Study on the Heat Transfer Capability of Silicon Carbide - Ethylene Glycol Nanofluid" (Insieme di parole chiave)
• Parole chiave di "Synthesis of SiC on Si(111) at moderate temperatures by supersonic C-60 beams" (Insieme di parole chiave)
• Keywords of "J-V characteristics of Al+ ion implanted p(+)/n 4H-SiC diodes annealed in silane ambient at 1600 degrees C" (Insieme di parole chiave)
• Parole chiave di "Fully implanted vertical p-i-n diodes using high-purity semi-insulating 4H-SiC wafers" (Insieme di parole chiave)
• Keywords of "Transport localization in heterogeneous Schottky barriers of quantum-defined metal films" (Insieme di parole chiave)
• Parole chiave di "Emission enhancement of SiC/SiO2 core/shell nanowires induced by the oxide shell" (Insieme di parole chiave)
• Keywords of "Al+ Implanted 4H-SiC p(+)-i-n Diodes: Forward Current Negative Temperature Coefficient" (Insieme di parole chiave)
• Keywords of "Effects of heating ramp rates on the characteristics of AI implanted 4H-SiC junctions" (Insieme di parole chiave)
• Keywords of "TEM and SEM-CL studies of SiC Nanowires" (Insieme di parole chiave)