4H-SiC

Label

• 4H-SiC (literal)

Membro di

• Parole chiave di "Surface barrier 4H-SiC soft X-ray detecor for hot plasmas diagnostic" (Insieme di parole chiave)
• Parole chiave di "Ion implanted lateral p+-i-n+ diodes on HPSI 4H-SiC" (Insieme di parole chiave)
• Keywords of "Al+ implanted 4H-SiC: improved electrical activation and ohmic contacts" (Insieme di parole chiave)
• Parole chiave di "Nanoscale characterization of SiC interfaces and devices" (Insieme di parole chiave)
• Keywords of "Characterization of MOS capacitors fabricated on n-type 4H-SiC" (Insieme di parole chiave)
• Keywords of "Improvement of electron channel mobility in 4H SiC MOSFET by using nitrogen implantation" (Insieme di parole chiave)
• Keywords of "C-V and DLTS analyses of trap-induced graded junctions: the case of Al+ implanted JTE p+n 4H-SiC diodes." (Insieme di parole chiave)
• Parole chiave di "Improving doping efficiency of P(+) implanted ions in 4H-SiC" (Insieme di parole chiave)
• Keywords of "4H-SiC and novel SI GaAs-based M-S-M radiation hard photodetectors applicable in UV, EUV and soft X-ray detection: Design, technology and performance testing" (Insieme di parole chiave)
• Parole chiave di "Microwave Annealing of Ion Implanted 4H-SiC" (Insieme di parole chiave)
• Keywords of "Fabrication of MOS Capacitors by Wet Oxidation of p-type 4H-SiC" (Insieme di parole chiave)
• Parole chiave di "Microwave Annealing of Al+ Implanted 4H-SiC: Towards Device Fabrication" (Insieme di parole chiave)
• Keywords of "Ar Annealing at 1600°C and 1650°C of Al+ Implanted p+/n 4H-SiC Diodes: Analysis of the J-V characteristics versus annealing temperature" (Insieme di parole chiave)
• Parole chiave di "Micro-Raman characterization of 4H-SiC stacking faults" (Insieme di parole chiave)
• Parole chiave di "Carbon-cap for Ohmic Contacts on Ion Implanted 4H-SiC" (Insieme di parole chiave)
• Keywords of "Current analysis of ion implanted p+/n 4H-SiC junctions: post-implantation annealing in Ar ambient" (Insieme di parole chiave)
• Parole chiave di "Interfacial properties of SiO2 grown on 4H-SiC: comparison between N2O and Wet O2 oxidation ambient" (Insieme di parole chiave)
• Keywords of "Probing at nanoscale underneath the gate oxides in 4H-SiC MOS-based devices annealed in N2O and POCI3" (Insieme di parole chiave)
• Parole chiave di "MOS capacitors fabricated on (0001) 4H-SiC implanted with N+ ions" (Insieme di parole chiave)
• Parole chiave di "Effects of N implantation before Gate Oxidation on the Performance of 4H-SiC MOSFET" (Insieme di parole chiave)
• Parole chiave di "Current analysis of ion implanted p+/n 4H-SiC junctions: post-implantation annealing in Ar ambient" (Insieme di parole chiave)
• Keywords of "Micro-Raman characterization of graphene grown on SiC(000-1)" (Insieme di parole chiave)
• Parole chiave di "Ion Implanted p+/n 4H-SiC Junctions: effect of the Heating Rate during Post Implantation Annealing" (Insieme di parole chiave)
• Keywords of "Basal Plane Dislocation Mitigation using High Temperature Annealing in 4H-SiC Epitaxy" (Insieme di parole chiave)
• Parole chiave di "Room temperature annealing effects on leakage current of ion implanted p+n 4H-SiC diodes" (Insieme di parole chiave)
• Keywords of "Analytical prediction of the cross-over point in the temperature coefficient of the forward characteristics of 4H-SiC p+-i-n diodes" (Insieme di parole chiave)
• Keywords of "Thin Metal Film Ni2Si/4H-SiC Vertical Schottky Photodiodes" (Insieme di parole chiave)
• Keywords of "Minimum ionizing particle detector based on p+n junction SiC diode" (Insieme di parole chiave)
• Parole chiave di "Characterization of MOS capacitors fabricated on n-type 4H-SiC implanted with nitrogen at high dose" (Insieme di parole chiave)
• Keywords of "P+ implanted 6H-SiC n+-i-p diodes: evidence for a post-implantation-annealing dependent defect activation" (Insieme di parole chiave)
• Parole chiave di "Formation of carbon vacancy in 4H silicon carbide during high-temperature processing" (Insieme di parole chiave)
• Keywords of "4H-SiC epitaxial layer grown on 150 mm automatic horizontal hot wall reactor PE1O6" (Insieme di parole chiave)
• Keywords of "Electrical characteristics of Schottky contacts on Ge-doped 4H-SiC" (Insieme di parole chiave)
• Parole chiave di "Interfacial properties of SiO2 grown on 4H-SiC: comparison between N2O and Wet O2 oxidation ambient" (Insieme di parole chiave)
• Keywords of "Effect of nitrogen implantation at the SiO2/SiC interface on the electron mobility and free carrier density in 4H-SiC metal oxide semiconductor field effect transistor channel" (Insieme di parole chiave)
• Keywords of "Characterization of SiO2/SiC interfaces annealed in N2O or POCl3" (Insieme di parole chiave)

Value

• 4H-SiC (literal)

Incoming links:

Ha membro

• Keywords of "Effect of nitrogen implantation at the SiO2/SiC interface on the electron mobility and free carrier density in 4H-SiC metal oxide semiconductor field effect transistor channel" (Insieme di parole chiave)
• Keywords of "Thin Metal Film Ni2Si/4H-SiC Vertical Schottky Photodiodes" (Insieme di parole chiave)
• Keywords of "Basal Plane Dislocation Mitigation using High Temperature Annealing in 4H-SiC Epitaxy" (Insieme di parole chiave)
• Keywords of "P+ implanted 6H-SiC n+-i-p diodes: evidence for a post-implantation-annealing dependent defect activation" (Insieme di parole chiave)
• Keywords of "4H-SiC epitaxial layer grown on 150 mm automatic horizontal hot wall reactor PE1O6" (Insieme di parole chiave)
• Parole chiave di "Microwave Annealing of Ion Implanted 4H-SiC" (Insieme di parole chiave)
• Keywords of "Analytical prediction of the cross-over point in the temperature coefficient of the forward characteristics of 4H-SiC p+-i-n diodes" (Insieme di parole chiave)
• Parole chiave di "Micro-Raman characterization of 4H-SiC stacking faults" (Insieme di parole chiave)
• Parole chiave di "Ion implanted lateral p+-i-n+ diodes on HPSI 4H-SiC" (Insieme di parole chiave)
• Parole chiave di "Room temperature annealing effects on leakage current of ion implanted p+n 4H-SiC diodes" (Insieme di parole chiave)
• Parole chiave di "MOS capacitors fabricated on (0001) 4H-SiC implanted with N+ ions" (Insieme di parole chiave)
• Keywords of "Improvement of electron channel mobility in 4H SiC MOSFET by using nitrogen implantation" (Insieme di parole chiave)
• Keywords of "Micro-Raman characterization of graphene grown on SiC(000-1)" (Insieme di parole chiave)
• Keywords of "4H-SiC and novel SI GaAs-based M-S-M radiation hard photodetectors applicable in UV, EUV and soft X-ray detection: Design, technology and performance testing" (Insieme di parole chiave)
• Keywords of "Fabrication of MOS Capacitors by Wet Oxidation of p-type 4H-SiC" (Insieme di parole chiave)
• Keywords of "Characterization of MOS capacitors fabricated on n-type 4H-SiC" (Insieme di parole chiave)
• Keywords of "Minimum ionizing particle detector based on p+n junction SiC diode" (Insieme di parole chiave)
• Keywords of "Probing at nanoscale underneath the gate oxides in 4H-SiC MOS-based devices annealed in N2O and POCI3" (Insieme di parole chiave)
• Parole chiave di "Improving doping efficiency of P(+) implanted ions in 4H-SiC" (Insieme di parole chiave)
• Parole chiave di "Effects of N implantation before Gate Oxidation on the Performance of 4H-SiC MOSFET" (Insieme di parole chiave)
• Parole chiave di "Carbon-cap for Ohmic Contacts on Ion Implanted 4H-SiC" (Insieme di parole chiave)
• Parole chiave di "Formation of carbon vacancy in 4H silicon carbide during high-temperature processing" (Insieme di parole chiave)
• Keywords of "C-V and DLTS analyses of trap-induced graded junctions: the case of Al+ implanted JTE p+n 4H-SiC diodes." (Insieme di parole chiave)
• Parole chiave di "Microwave Annealing of Al+ Implanted 4H-SiC: Towards Device Fabrication" (Insieme di parole chiave)
• Keywords of "Ar Annealing at 1600°C and 1650°C of Al+ Implanted p+/n 4H-SiC Diodes: Analysis of the J-V characteristics versus annealing temperature" (Insieme di parole chiave)
• Keywords of "Current analysis of ion implanted p+/n 4H-SiC junctions: post-implantation annealing in Ar ambient" (Insieme di parole chiave)
• Parole chiave di "Interfacial properties of SiO2 grown on 4H-SiC: comparison between N2O and Wet O2 oxidation ambient" (Insieme di parole chiave)
• Parole chiave di "Surface barrier 4H-SiC soft X-ray detecor for hot plasmas diagnostic" (Insieme di parole chiave)
• Keywords of "Characterization of SiO2/SiC interfaces annealed in N2O or POCl3" (Insieme di parole chiave)
• Keywords of "Electrical characteristics of Schottky contacts on Ge-doped 4H-SiC" (Insieme di parole chiave)
• Parole chiave di "Characterization of MOS capacitors fabricated on n-type 4H-SiC implanted with nitrogen at high dose" (Insieme di parole chiave)
• Keywords of "Al+ implanted 4H-SiC: improved electrical activation and ohmic contacts" (Insieme di parole chiave)
• Parole chiave di "Interfacial properties of SiO2 grown on 4H-SiC: comparison between N2O and Wet O2 oxidation ambient" (Insieme di parole chiave)
• Parole chiave di "Current analysis of ion implanted p+/n 4H-SiC junctions: post-implantation annealing in Ar ambient" (Insieme di parole chiave)
• Parole chiave di "Ion Implanted p+/n 4H-SiC Junctions: effect of the Heating Rate during Post Implantation Annealing" (Insieme di parole chiave)
• Parole chiave di "Nanoscale characterization of SiC interfaces and devices" (Insieme di parole chiave)