SI

Label

• SI (literal)

Membro di

• Keywords of "FROM NANOVOIDS TO BLISTERS IN HYDROGENATED AMORPHOUS SILICON" (Insieme di parole chiave)
• Parole chiave di "Characterization of embedded rhomboidal microchannels formation on silicon (100) surface" (Insieme di parole chiave)
• Keywords of "Anomalous transport of Sb in laser irradiated Ge" (Insieme di parole chiave)
• Parole chiave di "Two dimensional interstitial diffusion in mesoscopic structures" (Insieme di parole chiave)
• Parole chiave di "Apparent critical thickness versus temperature for InAs quantum dot growth on GaAs(001)" (Insieme di parole chiave)
• Parole chiave di "Evolution of boron-interstitial clusters in preamorphized silicon without the contribution of end-of-range defects" (Insieme di parole chiave)
• Parole chiave di "Role of self-interstitials on B diffusion in Ge" (Insieme di parole chiave)
• Keywords of "Ab initio finite-temperature excitons" (Insieme di parole chiave)
• Keywords of "Electrodissolution of Ti and p-Si in Acidic Fluoride Media. Formation Ratio of Oxide Layers from Electrochemical Impedance Spectroscopy" (Insieme di parole chiave)
• Keywords of "Silicon nanocrystals embedded in silicon carbide: Investigation of charge carrier transport and recombination" (Insieme di parole chiave)
• Keywords of "Investigation of two-dimensional diffusion of the self-interstitials in crystalline silicon at 800 degrees C and at room temperature" (Insieme di parole chiave)
• Parole chiave di "Thermal evolution of Er silicate thin films grown by rf magnetron sputtering" (Insieme di parole chiave)
• Parole chiave di "Electron density profile at the interface of SiO2/Si(001)" (Insieme di parole chiave)
• Keywords of "Investigation of two dimensional diffusion of the self-interstitials in crystalline Si at 800 °C and at room temperature" (Insieme di parole chiave)
• Keywords of "Optical transitions in Ge/SiGe multiple quantum wells with Ge-rich barriers" (Insieme di parole chiave)
• Keywords of "Photoelectron spectroscopy study of the effect of substrate doping on an HfO2/SiO2/n-Si gate stack" (Insieme di parole chiave)
• Keywords of "H induced optically-active defects in silicon photonic nanocavities" (Insieme di parole chiave)
• Parole chiave di "Detailed arsenic concentration profiles at Si/SiO2 interfaces" (Insieme di parole chiave)
• Keywords of "Sub-nanometric metallic Au clusters as efficient Er3+ sensitizers in silica" (Insieme di parole chiave)
• Keywords of "Localization of He induced nanovoids in buried Si1-xGex thin films" (Insieme di parole chiave)
• Keywords of "New insight on the interaction and diffusion properties of ion beam injected self-interstitials in crystalline silicon" (Insieme di parole chiave)
• Parole chiave di "An EXAFS investigation of arsenic shallow implant activation in silicon after laser sub-melt annealing" (Insieme di parole chiave)
• Parole chiave di "Room-temperature B off-lattice displacement and electrical deactivation induced by H and He implantation" (Insieme di parole chiave)
• Keywords of "Kinetic Monte Carlo simulation of dopant-defect systems under submicrosecond laser thermal processes" (Insieme di parole chiave)
• Keywords of "Interface structure and defects of silicon nanocrystals embedded into a-SiO(2)" (Insieme di parole chiave)
• Keywords of "Strong enhancement of Er3+ emission at room temperature in silicon-on-insulator photonic crystal waveguides" (Insieme di parole chiave)
• Parole chiave di "Room temperature migration of boron in crystalline silicon during secondary ion mass spectrometry profiling" (Insieme di parole chiave)
• Keywords of "Atomistic mechanism of boron diffusion in silicon" (Insieme di parole chiave)
• Parole chiave di "Kinetic Monte Carlo simulations for transient thermal fields: Computational methodology and application to the submicrosecond laser processes in implanted silicon" (Insieme di parole chiave)
• Parole chiave di "Low-temperature germanium thin films on silicon" (Insieme di parole chiave)
• Keywords of "Experimental investigations of boron diffusion mechanisms in crystalline and amorphous silicon" (Insieme di parole chiave)

Value

• SI (literal)

Incoming links:

Ha membro

• Parole chiave di "Electron density profile at the interface of SiO2/Si(001)" (Insieme di parole chiave)
• Parole chiave di "Room-temperature B off-lattice displacement and electrical deactivation induced by H and He implantation" (Insieme di parole chiave)
• Keywords of "Strong enhancement of Er3+ emission at room temperature in silicon-on-insulator photonic crystal waveguides" (Insieme di parole chiave)
• Keywords of "Electrodissolution of Ti and p-Si in Acidic Fluoride Media. Formation Ratio of Oxide Layers from Electrochemical Impedance Spectroscopy" (Insieme di parole chiave)
• Parole chiave di "Thermal evolution of Er silicate thin films grown by rf magnetron sputtering" (Insieme di parole chiave)
• Keywords of "Ab initio finite-temperature excitons" (Insieme di parole chiave)
• Keywords of "Investigation of two dimensional diffusion of the self-interstitials in crystalline Si at 800 °C and at room temperature" (Insieme di parole chiave)
• Keywords of "Optical transitions in Ge/SiGe multiple quantum wells with Ge-rich barriers" (Insieme di parole chiave)
• Keywords of "Silicon nanocrystals embedded in silicon carbide: Investigation of charge carrier transport and recombination" (Insieme di parole chiave)
• Parole chiave di "Two dimensional interstitial diffusion in mesoscopic structures" (Insieme di parole chiave)
• Parole chiave di "Apparent critical thickness versus temperature for InAs quantum dot growth on GaAs(001)" (Insieme di parole chiave)
• Parole chiave di "Role of self-interstitials on B diffusion in Ge" (Insieme di parole chiave)
• Keywords of "Interface structure and defects of silicon nanocrystals embedded into a-SiO(2)" (Insieme di parole chiave)
• Keywords of "Kinetic Monte Carlo simulation of dopant-defect systems under submicrosecond laser thermal processes" (Insieme di parole chiave)
• Keywords of "Photoelectron spectroscopy study of the effect of substrate doping on an HfO2/SiO2/n-Si gate stack" (Insieme di parole chiave)
• Parole chiave di "Kinetic Monte Carlo simulations for transient thermal fields: Computational methodology and application to the submicrosecond laser processes in implanted silicon" (Insieme di parole chiave)
• Keywords of "FROM NANOVOIDS TO BLISTERS IN HYDROGENATED AMORPHOUS SILICON" (Insieme di parole chiave)
• Keywords of "Anomalous transport of Sb in laser irradiated Ge" (Insieme di parole chiave)
• Parole chiave di "Low-temperature germanium thin films on silicon" (Insieme di parole chiave)
• Keywords of "Investigation of two-dimensional diffusion of the self-interstitials in crystalline silicon at 800 degrees C and at room temperature" (Insieme di parole chiave)
• Keywords of "H induced optically-active defects in silicon photonic nanocavities" (Insieme di parole chiave)
• Parole chiave di "Characterization of embedded rhomboidal microchannels formation on silicon (100) surface" (Insieme di parole chiave)
• Parole chiave di "Evolution of boron-interstitial clusters in preamorphized silicon without the contribution of end-of-range defects" (Insieme di parole chiave)
• Keywords of "Experimental investigations of boron diffusion mechanisms in crystalline and amorphous silicon" (Insieme di parole chiave)
• Keywords of "Sub-nanometric metallic Au clusters as efficient Er3+ sensitizers in silica" (Insieme di parole chiave)
• Parole chiave di "Detailed arsenic concentration profiles at Si/SiO2 interfaces" (Insieme di parole chiave)
• Keywords of "Atomistic mechanism of boron diffusion in silicon" (Insieme di parole chiave)
• Keywords of "Localization of He induced nanovoids in buried Si1-xGex thin films" (Insieme di parole chiave)
• Parole chiave di "An EXAFS investigation of arsenic shallow implant activation in silicon after laser sub-melt annealing" (Insieme di parole chiave)
• Keywords of "New insight on the interaction and diffusion properties of ion beam injected self-interstitials in crystalline silicon" (Insieme di parole chiave)
• Parole chiave di "Room temperature migration of boron in crystalline silicon during secondary ion mass spectrometry profiling" (Insieme di parole chiave)