POINT-DEFECTS
- Label
- POINT-DEFECTS (literal)
- Membro di
- Parole chiave di "Oxide/metal interface distance and epitaxial strain in the NiO/Ag(001) system" (Insieme di parole chiave)
- Parole chiave di "Role of C in the formation and kinetics of nanovoids induced by He+ implantation in Si" (Insieme di parole chiave)
- Keywords of "Defect-induced homogeneous amorphization of silicon: the role of defect structure and population" (Insieme di parole chiave)
- Parole chiave di "Growth of NiO on Ag(001): Atomic environment, strain, and interface relaxations studied by polarization dependent extended X-ray absorption fine structure" (Insieme di parole chiave)
- Parole chiave di "Fluorine incorporation in preamorphized silicon" (Insieme di parole chiave)
- Keywords of "Iso-concentration study of atomistic mechanism of B diffusion in Si" (Insieme di parole chiave)
- Keywords of "Atomistic mechanism of boron diffusion in silicon" (Insieme di parole chiave)
- Value
- POINT-DEFECTS (literal)
Incoming links:
- Ha membro
- Keywords of "Defect-induced homogeneous amorphization of silicon: the role of defect structure and population" (Insieme di parole chiave)
- Keywords of "Iso-concentration study of atomistic mechanism of B diffusion in Si" (Insieme di parole chiave)
- Parole chiave di "Growth of NiO on Ag(001): Atomic environment, strain, and interface relaxations studied by polarization dependent extended X-ray absorption fine structure" (Insieme di parole chiave)
- Parole chiave di "Oxide/metal interface distance and epitaxial strain in the NiO/Ag(001) system" (Insieme di parole chiave)
- Parole chiave di "Role of C in the formation and kinetics of nanovoids induced by He+ implantation in Si" (Insieme di parole chiave)
- Keywords of "Atomistic mechanism of boron diffusion in silicon" (Insieme di parole chiave)
- Parole chiave di "Fluorine incorporation in preamorphized silicon" (Insieme di parole chiave)
