N implantation
- Label
- N implantation (literal)
- Membro di
- Keywords of "Fabrication of MOS Capacitors by Wet Oxidation of p-type 4H-SiC" (Insieme di parole chiave)
- Keywords of "Characterization of MOS capacitors fabricated on n-type 4H-SiC" (Insieme di parole chiave)
- Keywords of "The influence of excess nitrogen, on the electrical properties of the 4H-SiC/SiO(2) interface" (Insieme di parole chiave)
- Parole chiave di "Nitridation of the SiO(2)/SiC interface by N(+) implantation: Hall versus field effect mobility in n-channel planar 4H-SiC MOSFETs" (Insieme di parole chiave)
- Keywords of "Analysis of the Electron Traps at the 4H-SiC/SiO(2) Interface of a Gate Oxide Obtained by Wet Oxidation of a Nitrogen pre-Implanted Layer" (Insieme di parole chiave)
- Parole chiave di "Non-nitridated oxides: abnormal behaviour of n-4H-SiC/SiO2 capacitors at low temperature caused by near interface states" (Insieme di parole chiave)
- Value
- N implantation (literal)
Incoming links:
- Ha membro
- Parole chiave di "Non-nitridated oxides: abnormal behaviour of n-4H-SiC/SiO2 capacitors at low temperature caused by near interface states" (Insieme di parole chiave)
- Parole chiave di "Nitridation of the SiO(2)/SiC interface by N(+) implantation: Hall versus field effect mobility in n-channel planar 4H-SiC MOSFETs" (Insieme di parole chiave)
- Keywords of "Fabrication of MOS Capacitors by Wet Oxidation of p-type 4H-SiC" (Insieme di parole chiave)
- Keywords of "Characterization of MOS capacitors fabricated on n-type 4H-SiC" (Insieme di parole chiave)
- Keywords of "The influence of excess nitrogen, on the electrical properties of the 4H-SiC/SiO(2) interface" (Insieme di parole chiave)
- Keywords of "Analysis of the Electron Traps at the 4H-SiC/SiO(2) Interface of a Gate Oxide Obtained by Wet Oxidation of a Nitrogen pre-Implanted Layer" (Insieme di parole chiave)
