InGaP/GaAs

Label

• InGaP/GaAs (literal)

Membro di

• Parole chiave di "Combined (200) DF-TEM and X-ray diffraction investigations of interfacesin MOVPE grown InGaP/GaAs heterojunctions" (Insieme di parole chiave)
• Parole chiave di "Thermodynamical analysis of abrupt interfaces of InGaP/GaAs and GaAs/InGaP heterostructures" (Insieme di parole chiave)
• Parole chiave di "Detailed DF-TEM and X-ray diffraction investigations of interfaces in MOVPE grown InGaP/GaAs heterojunctions" (Insieme di parole chiave)
• Keywords of "In-depth analysis of the interfaces in GaAs/InGaP heterosystem" (Insieme di parole chiave)
• Parole chiave di "Chemical characterization of extra layers at the interfaces in MOCVD InGaP/GaAs junctions by electron beam methods" (Insieme di parole chiave)
• Parole chiave di "Interface studies of InGaP epilayers grown by LP MOVPE" (Insieme di parole chiave)
• Keywords of "CL and Dark Field TEM Analysis of Composition Change at Interfaces in InGaP/GaAs Junctions Grown by MOCVD" (Insieme di parole chiave)
• Parole chiave di "TEM and HRXRD analysis of LP MOVPE grown InGaP/GaAs epilayers" (Insieme di parole chiave)
• Parole chiave di "Detection of the interlayer at the GaAs-on-InGaP interface in MOVPE InGaP/GaAs by the Dark Field Method" (Insieme di parole chiave)
• Keywords of "On the nature of the interlayer at the interface in MOVPE InGaP/GaAs heterojunctions" (Insieme di parole chiave)
• Keywords of "Determination of the valence band offset of MOVPE-grown In0.48Ga0.52P/GaAs multiple quantum wells by admittance spectroscopy" (Insieme di parole chiave)
• Keywords of "Interface analysis of InGaP/GaAs and GaAs/InGaP heterosystems" (Insieme di parole chiave)

Value

• InGaP/GaAs (literal)

Incoming links:

Ha membro

• Parole chiave di "Interface studies of InGaP epilayers grown by LP MOVPE" (Insieme di parole chiave)
• Keywords of "In-depth analysis of the interfaces in GaAs/InGaP heterosystem" (Insieme di parole chiave)
• Parole chiave di "Detailed DF-TEM and X-ray diffraction investigations of interfaces in MOVPE grown InGaP/GaAs heterojunctions" (Insieme di parole chiave)
• Parole chiave di "TEM and HRXRD analysis of LP MOVPE grown InGaP/GaAs epilayers" (Insieme di parole chiave)
• Keywords of "Interface analysis of InGaP/GaAs and GaAs/InGaP heterosystems" (Insieme di parole chiave)
• Keywords of "Determination of the valence band offset of MOVPE-grown In0.48Ga0.52P/GaAs multiple quantum wells by admittance spectroscopy" (Insieme di parole chiave)
• Parole chiave di "Chemical characterization of extra layers at the interfaces in MOCVD InGaP/GaAs junctions by electron beam methods" (Insieme di parole chiave)
• Parole chiave di "Thermodynamical analysis of abrupt interfaces of InGaP/GaAs and GaAs/InGaP heterostructures" (Insieme di parole chiave)
• Parole chiave di "Detection of the interlayer at the GaAs-on-InGaP interface in MOVPE InGaP/GaAs by the Dark Field Method" (Insieme di parole chiave)
• Keywords of "On the nature of the interlayer at the interface in MOVPE InGaP/GaAs heterojunctions" (Insieme di parole chiave)
• Parole chiave di "Combined (200) DF-TEM and X-ray diffraction investigations of interfacesin MOVPE grown InGaP/GaAs heterojunctions" (Insieme di parole chiave)
• Keywords of "CL and Dark Field TEM Analysis of Composition Change at Interfaces in InGaP/GaAs Junctions Grown by MOCVD" (Insieme di parole chiave)