GaN

Label

• GaN (literal)

Membro di

• Parole chiave di "An optical system for detecting the concentration of combustion products" (Insieme di parole chiave)
• Keywords of "Barrier inhomogeneity and electrical properties of Pt/GaN Schottky contacts" (Insieme di parole chiave)
• Keywords of "Electrical Properties of Ni/GaN Schottky Contacts on High-temperature Annealed GaN Surfaces" (Insieme di parole chiave)
• Parole chiave di "Defect distribution along single GaN nanowhiskers" (Insieme di parole chiave)
• Keywords of "Temperature behavior of inhomogeneous Pt/GaN Schottky contacts" (Insieme di parole chiave)
• Parole chiave di "Ultra Fast High Temperature Microwave Annealing of Ion Implanted Large Bandgap Semiconductors" (Insieme di parole chiave)
• Keywords of "Large area silicon carbide substrates and heteroepitaxial GaN for power devices applications (LAST - POWER)" (Insieme di parole chiave)
• Parole chiave di "Temperature dependence of the specific resistance in Ti/Al/Ni/Au contacts on n-type GaN" (Insieme di parole chiave)
• Keywords of "Quantitative determination of depth carrier profiles in ion-implanted Gallium Nitride" (Insieme di parole chiave)
• Parole chiave di "A new approach to correlate transport processes and optical efficiency in GaN-based LEDs" (Insieme di parole chiave)
• Parole chiave di "Nanoscale reliability aspects of insulator onto wide band gap compounds" (Insieme di parole chiave)
• Parole chiave di "Electrical activation and carrier compensation in Si and Mg implanted GaN by scanning capacitance microscopy" (Insieme di parole chiave)
• Keywords of "Current Transport in Ti/Al/Ni/Au Ohmic Contacts to GaN and AlGaN" (Insieme di parole chiave)
• Keywords of "Electrical Properties of Inhomogeneous Pt/GaN Schottky Barrier" (Insieme di parole chiave)

Value

• GaN (literal)

Incoming links:

Ha membro

• Keywords of "Electrical Properties of Inhomogeneous Pt/GaN Schottky Barrier" (Insieme di parole chiave)
• Parole chiave di "Electrical activation and carrier compensation in Si and Mg implanted GaN by scanning capacitance microscopy" (Insieme di parole chiave)
• Keywords of "Electrical Properties of Ni/GaN Schottky Contacts on High-temperature Annealed GaN Surfaces" (Insieme di parole chiave)
• Parole chiave di "Nanoscale reliability aspects of insulator onto wide band gap compounds" (Insieme di parole chiave)
• Parole chiave di "Defect distribution along single GaN nanowhiskers" (Insieme di parole chiave)
• Parole chiave di "An optical system for detecting the concentration of combustion products" (Insieme di parole chiave)
• Keywords of "Large area silicon carbide substrates and heteroepitaxial GaN for power devices applications (LAST - POWER)" (Insieme di parole chiave)
• Parole chiave di "Ultra Fast High Temperature Microwave Annealing of Ion Implanted Large Bandgap Semiconductors" (Insieme di parole chiave)
• Keywords of "Current Transport in Ti/Al/Ni/Au Ohmic Contacts to GaN and AlGaN" (Insieme di parole chiave)
• Parole chiave di "Temperature dependence of the specific resistance in Ti/Al/Ni/Au contacts on n-type GaN" (Insieme di parole chiave)
• Parole chiave di "A new approach to correlate transport processes and optical efficiency in GaN-based LEDs" (Insieme di parole chiave)
• Keywords of "Quantitative determination of depth carrier profiles in ion-implanted Gallium Nitride" (Insieme di parole chiave)
• Keywords of "Temperature behavior of inhomogeneous Pt/GaN Schottky contacts" (Insieme di parole chiave)
• Keywords of "Barrier inhomogeneity and electrical properties of Pt/GaN Schottky contacts" (Insieme di parole chiave)