GATE DIELECTRICS
- Label
- GATE DIELECTRICS (literal)
- Membro di
- Keywords of "Nondestructive diagnostics of high-kappa dielectrics for advanced electronic devices" (Insieme di parole chiave)
- Keywords of "Interface engineering for Ge metal-oxide-semiconductor devices" (Insieme di parole chiave)
- Parole chiave di "Synthesis and characterization of hafnium oxide and hafnium aluminate ultra-thin films by a sol-gel spin coating process for microelectronic applications" (Insieme di parole chiave)
- Keywords of "Multifuncional nanocrystalline Thin films of Er2O3: interplay between nucleation kinetics and film characteristics" (Insieme di parole chiave)
- Parole chiave di "[(Me3Si)(2)N](3)Lu: Molecular structure and use as Lu and Si source for atomic layer deposition of Lu silicate films" (Insieme di parole chiave)
- Value
- GATE DIELECTRICS (literal)
Incoming links:
- Ha membro
- Keywords of "Nondestructive diagnostics of high-kappa dielectrics for advanced electronic devices" (Insieme di parole chiave)
- Keywords of "Interface engineering for Ge metal-oxide-semiconductor devices" (Insieme di parole chiave)
- Parole chiave di "Synthesis and characterization of hafnium oxide and hafnium aluminate ultra-thin films by a sol-gel spin coating process for microelectronic applications" (Insieme di parole chiave)
- Parole chiave di "[(Me3Si)(2)N](3)Lu: Molecular structure and use as Lu and Si source for atomic layer deposition of Lu silicate films" (Insieme di parole chiave)
- Keywords of "Multifuncional nanocrystalline Thin films of Er2O3: interplay between nucleation kinetics and film characteristics" (Insieme di parole chiave)