GAN
- Label
- GAN (literal)
- Membro di
- Keywords of "Growth and nonlinear characterization of AlN/GaN structures" (Insieme di parole chiave)
- Parole chiave di "Defective aluminium nitride nanotubes: a new way for spintronics? A density functional study" (Insieme di parole chiave)
- Parole chiave di "A study of the interaction of 4H-SiC and 6H-SiC(0001)Si surfaces with atomic nitrogen" (Insieme di parole chiave)
- Keywords of "AlN thin films prepared by ArF plasma assisted PLD. Role of process conditions on electronic and chemical-morphological properties" (Insieme di parole chiave)
- Parole chiave di "Ultrathin InAlN/GaN heterostructures on sapphire for high on/off current ratio high electron mobility transistors" (Insieme di parole chiave)
- Keywords of "Second harmonic generation in GaN/Al50Ga50N films deposited by metal-organic chemical vapor deposition" (Insieme di parole chiave)
- Value
- GAN (literal)
Incoming links:
- Ha membro
- Keywords of "Second harmonic generation in GaN/Al50Ga50N films deposited by metal-organic chemical vapor deposition" (Insieme di parole chiave)
- Keywords of "Growth and nonlinear characterization of AlN/GaN structures" (Insieme di parole chiave)
- Keywords of "AlN thin films prepared by ArF plasma assisted PLD. Role of process conditions on electronic and chemical-morphological properties" (Insieme di parole chiave)
- Parole chiave di "Defective aluminium nitride nanotubes: a new way for spintronics? A density functional study" (Insieme di parole chiave)
- Parole chiave di "Ultrathin InAlN/GaN heterostructures on sapphire for high on/off current ratio high electron mobility transistors" (Insieme di parole chiave)
- Parole chiave di "A study of the interaction of 4H-SiC and 6H-SiC(0001)Si surfaces with atomic nitrogen" (Insieme di parole chiave)