Parole chiave di "Valence and conduction intersubband transitions in SiGe, Ge-rich, quantum wells on [001] Si0.5Ge0.5 substrates: A tight-binding approach"

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• Parole chiave di "Valence and conduction intersubband transitions in SiGe, Ge-rich, quantum wells on [001] Si0.5Ge0.5 substrates: A tight-binding approach" (literal)
• Keywords of "Valence and conduction intersubband transitions in SiGe, Ge-rich, quantum wells on [001] Si0.5Ge0.5 substrates: A tight-binding approach" (literal)

Insieme di parole chiave di

• Valence and conduction intersubband transitions in SiGe, Ge-rich, quantum wells on [001] Si0.5Ge0.5 substrates: A tight-binding approach (Articolo in rivista) (Prodotto della ricerca)

Ha membro

• ABSORPTION (Parola chiave)
• BAND (Parola chiave)
• CASCADE STRUCTURES (Parola chiave)
• PARAMETERS (Parola chiave)
• ELECTROLUMINESCENCE (Parola chiave)

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Insieme di parole chiave

• Valence and conduction intersubband transitions in SiGe, Ge-rich, quantum wells on [001] Si0.5Ge0.5 substrates: A tight-binding approach (Articolo in rivista) (Prodotto della ricerca)

Membro di

• ABSORPTION (Parola chiave)
• ELECTROLUMINESCENCE (Parola chiave)
• PARAMETERS (Parola chiave)
• BAND (Parola chiave)
• CASCADE STRUCTURES (Parola chiave)