Parole chiave di "Analysis of electron traps at the 4H-SiC/SiO2 interface; influence by nitrogen implantation prior to wet oxidation"

Label

• Parole chiave di "Analysis of electron traps at the 4H-SiC/SiO2 interface; influence by nitrogen implantation prior to wet oxidation" (literal)
• Keywords of "Analysis of electron traps at the 4H-SiC/SiO2 interface; influence by nitrogen implantation prior to wet oxidation" (literal)

Insieme di parole chiave di

• Analysis of electron traps at the 4H-SiC/SiO2 interface; influence by nitrogen implantation prior to wet oxidation (Articolo in rivista) (Prodotto della ricerca)

Ha membro

• silicon carbide (Parola chiave)
• interface state passivation (Parola chiave)
• thermal oxide (Parola chiave)
• MOS (Parola chiave)
• ion implantation (Parola chiave)

Incoming links:

Insieme di parole chiave

• Analysis of electron traps at the 4H-SiC/SiO2 interface; influence by nitrogen implantation prior to wet oxidation (Articolo in rivista) (Prodotto della ricerca)

Membro di

• ion implantation (Parola chiave)
• silicon carbide (Parola chiave)
• thermal oxide (Parola chiave)
• interface state passivation (Parola chiave)
• MOS (Parola chiave)