http://www.cnr.it/ontology/cnr/individuo/insiemeDiParoleChiave/36659

Keywords of "Dielectric properties of Er-doped HfO2 (Er similar to 15%) grown by atomic layer deposition for high-kappa gate stacks"

Label

Keywords of "Dielectric properties of Er-doped HfO2 (Er similar to 15%) grown by atomic layer deposition for high-kappa gate stacks" (literal)
Parole chiave di "Dielectric properties of Er-doped HfO2 (Er similar to 15%) grown by atomic layer deposition for high-kappa gate stacks" (literal)

Insieme di parole chiave di

Dielectric properties of Er-doped HfO2 (Er similar to 15%) grown by atomic layer deposition for high-kappa gate stacks (Articolo in rivista) (Prodotto della ricerca)

Ha membro

atomic layer deposition; dielectric polarisation; erbium; hafnium compounds; high-k dielectric thin films; leakage currents; (Parola chiave)

Incoming links:

Insieme di parole chiave

Dielectric properties of Er-doped HfO2 (Er similar to 15%) grown by atomic layer deposition for high-kappa gate stacks (Articolo in rivista) (Prodotto della ricerca)

Membro di

atomic layer deposition; dielectric polarisation; erbium; hafnium compounds; high-k dielectric thin films; leakage currents; (Parola chiave)

data.CNR.it