Parole chiave di "Effect of nitrogen implantation at the SiO2/SiC interface on the electron mobility and free carrier density in 4H-SiC metal oxide semiconductor field effect transistor channel"

Label

• Parole chiave di "Effect of nitrogen implantation at the SiO2/SiC interface on the electron mobility and free carrier density in 4H-SiC metal oxide semiconductor field effect transistor channel" (literal)
• Keywords of "Effect of nitrogen implantation at the SiO2/SiC interface on the electron mobility and free carrier density in 4H-SiC metal oxide semiconductor field effect transistor channel" (literal)

Insieme di parole chiave di

• Effect of nitrogen implantation at the SiO2/SiC interface on the electron mobility and free carrier density in 4H-SiC metal oxide semiconductor field effect transistor channel (Articolo in rivista) (Prodotto della ricerca)

Ha membro

• MOSFET (Parola chiave)
• free carrier density (Parola chiave)
• 4H-SiC (Parola chiave)
• electron mobility (Parola chiave)

Incoming links:

Insieme di parole chiave

• Effect of nitrogen implantation at the SiO2/SiC interface on the electron mobility and free carrier density in 4H-SiC metal oxide semiconductor field effect transistor channel (Articolo in rivista) (Prodotto della ricerca)

Membro di

• MOSFET (Parola chiave)
• free carrier density (Parola chiave)
• 4H-SiC (Parola chiave)
• electron mobility (Parola chiave)