Keywords of "MOS capacitors obtained by wet oxidation of n-type 4H-SiC pre-implanted with Nitrogen"
- Label
- Keywords of "MOS capacitors obtained by wet oxidation of n-type 4H-SiC pre-implanted with Nitrogen" (literal)
- Parole chiave di "MOS capacitors obtained by wet oxidation of n-type 4H-SiC pre-implanted with Nitrogen" (literal)
- Insieme di parole chiave di
- Ha membro
- silicon carbide (Parola chiave)
- thermal oxidation (Parola chiave)
- interface state passivation (Parola chiave)
- ion implantation (Parola chiave)
Incoming links:
- Insieme di parole chiave
- Membro di
- ion implantation (Parola chiave)
- silicon carbide (Parola chiave)
- interface state passivation (Parola chiave)
- thermal oxidation (Parola chiave)
