Parole chiave di "Ge assisted 3C-SiC nucleation and growth by vapour phase epitaxy on on-axis 4H-SiC substrate"
- Label
- Parole chiave di "Ge assisted 3C-SiC nucleation and growth by vapour phase epitaxy on on-axis 4H-SiC substrate" (literal)
- Keywords of "Ge assisted 3C-SiC nucleation and growth by vapour phase epitaxy on on-axis 4H-SiC substrate" (literal)
- Insieme di parole chiave di
- Ge assisted 3C-SiC nucleation and growth by vapour phase epitaxy on on-axis 4H-SiC substrate (Articolo in rivista) (http://www.cnr.it/ontology/cnr/individuo/prodotto/TIPO1101)
- Ha membro
- C-AFM and barrier height (Parola chiave)
- CVD (Parola chiave)
- Germanium (Parola chiave)
- In-situ pretreatment (Parola chiave)
Incoming links:
- Insieme di parole chiave
- Ge assisted 3C-SiC nucleation and growth by vapour phase epitaxy on on-axis 4H-SiC substrate (Articolo in rivista) (http://www.cnr.it/ontology/cnr/individuo/prodotto/TIPO1101)
- Membro di
- Germanium (Parola chiave)
- CVD (Parola chiave)
- C-AFM and barrier height (Parola chiave)
- In-situ pretreatment (Parola chiave)
