Parole chiave di "Thermal stability of high-k oxides on SiO2/Si or SixNy/SiO2/Si for charge-trapping nonvolatile memories"

Label

• Parole chiave di "Thermal stability of high-k oxides on SiO2/Si or SixNy/SiO2/Si for charge-trapping nonvolatile memories" (literal)
• Keywords of "Thermal stability of high-k oxides on SiO2/Si or SixNy/SiO2/Si for charge-trapping nonvolatile memories" (literal)

Insieme di parole chiave di

• Thermal stability of high-k oxides on SiO2/Si or SixNy/SiO2/Si for charge-trapping nonvolatile memories (Articolo in rivista) (Prodotto della ricerca)

Ha membro

• Dielectric devices (Parola chiave)
• Hafnium oxides (Parola chiave)
• Atomic layer deposition (Parola chiave)
• Thermodynamic stability (Parola chiave)
• Charge trapping memories (Parola chiave)
• Dysprosium (Parola chiave)
• CMOS compatibility (Parola chiave)
• Oxides (Parola chiave)
• Zirconia (Parola chiave)
• Silicon (Parola chiave)
• Secondary ion mass spectrometry (Parola chiave)
• Depth profile (Parola chiave)
• Scandates (Parola chiave)
• ToF SIMS (Parola chiave)

Incoming links:

Insieme di parole chiave

• Thermal stability of high-k oxides on SiO2/Si or SixNy/SiO2/Si for charge-trapping nonvolatile memories (Articolo in rivista) (Prodotto della ricerca)

Membro di

• Zirconia (Parola chiave)
• Silicon (Parola chiave)
• Secondary ion mass spectrometry (Parola chiave)
• Charge trapping memories (Parola chiave)
• Dysprosium (Parola chiave)
• CMOS compatibility (Parola chiave)
• Dielectric devices (Parola chiave)
• Hafnium oxides (Parola chiave)
• Atomic layer deposition (Parola chiave)
• Thermodynamic stability (Parola chiave)
• Oxides (Parola chiave)
• Scandates (Parola chiave)
• ToF SIMS (Parola chiave)
• Depth profile (Parola chiave)