Parole chiave di "Cubic/tetragonal phase stabilization in high-ZrO2 thin films grown using O3-based atomic layer deposition"
- Label
- Parole chiave di "Cubic/tetragonal phase stabilization in high-ZrO2 thin films grown using O3-based atomic layer deposition" (literal)
- Keywords of "Cubic/tetragonal phase stabilization in high-ZrO2 thin films grown using O3-based atomic layer deposition" (literal)
- Insieme di parole chiave di
- Cubic/tetragonal phase stabilization in high-ZrO2 thin films grown using O3-based atomic layer deposition (Articolo in rivista) (http://www.cnr.it/ontology/cnr/individuo/prodotto/TIPO1101)
- Ha membro
- Oxidizing agents (Parola chiave)
- Vapor deposition (Parola chiave)
- Micro-electronic devices (Parola chiave)
- Dielectric materials (Parola chiave)
- Crystallographic phasis (Parola chiave)
- Deposition films (Parola chiave)
- Microelectronics (Parola chiave)
- Zirconium alloys (Parola chiave)
- Oxygen sources (Parola chiave)
- Rapid thermal annealing (Parola chiave)
- Crystallographic phase (Parola chiave)
- Permittivity (Parola chiave)
- Non-volatile memories (Parola chiave)
- Deposition process (Parola chiave)
- Dielectric constant values (Parola chiave)
- Atomic layer deposition (Parola chiave)
- Grazing incidence X-ray diffraction (Parola chiave)
- X ray diffraction (Parola chiave)
- Depth profile (Parola chiave)
- Phase stabilization (Parola chiave)
- Oxygen (Parola chiave)
- Monoclinic phase (Parola chiave)
- Secondary ion mass spectrometry (Parola chiave)
- X ray reflectivity (Parola chiave)
- Time of flight secondary ion mass spectrometry (Parola chiave)
- Si (100) substrate (Parola chiave)
- Electric properties (Parola chiave)
- Zirconium (Parola chiave)
- Mixed phasis (Parola chiave)
- Replacement materials (Parola chiave)
- Thin films (Parola chiave)
- Crystallographic structure (Parola chiave)
- Oxygen precursors (Parola chiave)
Incoming links:
- Insieme di parole chiave
- Cubic/tetragonal phase stabilization in high-ZrO2 thin films grown using O3-based atomic layer deposition (Articolo in rivista) (http://www.cnr.it/ontology/cnr/individuo/prodotto/TIPO1101)
- Membro di
- Zirconium (Parola chiave)
- Thin films (Parola chiave)
- X ray diffraction (Parola chiave)
- Rapid thermal annealing (Parola chiave)
- Non-volatile memories (Parola chiave)
- Secondary ion mass spectrometry (Parola chiave)
- X ray reflectivity (Parola chiave)
- Time of flight secondary ion mass spectrometry (Parola chiave)
- Atomic layer deposition (Parola chiave)
- Depth profile (Parola chiave)
- Dielectric materials (Parola chiave)
- Permittivity (Parola chiave)
- Microelectronics (Parola chiave)
- Zirconium alloys (Parola chiave)
- Grazing incidence X-ray diffraction (Parola chiave)
- Electric properties (Parola chiave)
- Deposition process (Parola chiave)
- Oxygen (Parola chiave)
- Crystallographic phase (Parola chiave)
- Crystallographic phasis (Parola chiave)
- Crystallographic structure (Parola chiave)
- Deposition films (Parola chiave)
- Mixed phasis (Parola chiave)
- Monoclinic phase (Parola chiave)
- Dielectric constant values (Parola chiave)
- Micro-electronic devices (Parola chiave)
- Oxidizing agents (Parola chiave)
- Si (100) substrate (Parola chiave)
- Oxygen precursors (Parola chiave)
- Oxygen sources (Parola chiave)
- Phase stabilization (Parola chiave)
- Replacement materials (Parola chiave)
- Vapor deposition (Parola chiave)
