Keywords of "J-V characteristics of Al+ ion implanted p(+)/n 4H-SiC diodes annealed in silane ambient at 1600 degrees C"

Label

• Keywords of "J-V characteristics of Al+ ion implanted p(+)/n 4H-SiC diodes annealed in silane ambient at 1600 degrees C" (literal)
• Parole chiave di "J-V characteristics of Al+ ion implanted p(+)/n 4H-SiC diodes annealed in silane ambient at 1600 degrees C" (literal)

Insieme di parole chiave di

• J-V characteristics of Al+ ion implanted p(+)/n 4H-SiC diodes annealed in silane ambient at 1600 degrees C (Articolo in rivista) (http://www.cnr.it/ontology/cnr/individuo/prodotto/TIPO1101)

Ha membro

• silicon carbide (Parola chiave)
• ion implantation (Parola chiave)
• silane (Parola chiave)
• CARBIDE (Parola chiave)
• ACTIVATION (Parola chiave)
• ALUMINUM (Parola chiave)
• p(+)/n junction diode (Parola chiave)
• annealing (Parola chiave)

Incoming links:

Insieme di parole chiave

• J-V characteristics of Al+ ion implanted p(+)/n 4H-SiC diodes annealed in silane ambient at 1600 degrees C (Articolo in rivista) (http://www.cnr.it/ontology/cnr/individuo/prodotto/TIPO1101)

Membro di

• ion implantation (Parola chiave)
• ACTIVATION (Parola chiave)
• silicon carbide (Parola chiave)
• annealing (Parola chiave)
• silane (Parola chiave)
• ALUMINUM (Parola chiave)
• p(+)/n junction diode (Parola chiave)
• CARBIDE (Parola chiave)