Parole chiave di "Nitridation of the SiO(2)/SiC interface by N(+) implantation: Hall versus field effect mobility in n-channel planar 4H-SiC MOSFETs"

Label

• Parole chiave di "Nitridation of the SiO(2)/SiC interface by N(+) implantation: Hall versus field effect mobility in n-channel planar 4H-SiC MOSFETs" (literal)
• Keywords of "Nitridation of the SiO(2)/SiC interface by N(+) implantation: Hall versus field effect mobility in n-channel planar 4H-SiC MOSFETs" (literal)

Insieme di parole chiave di

• Nitridation of the SiO(2)/SiC interface by N(+) implantation: Hall versus field effect mobility in n-channel planar 4H-SiC MOSFETs (Contributo in atti di convegno) (Prodotto della ricerca)

Ha membro

• N implantation (Parola chiave)
• Hall measurements (Parola chiave)
• Transmission Electron Microscopy (TEM) (Parola chiave)
• MECHANISMS (Parola chiave)
• OXIDATION (Parola chiave)
• PERFORMANCE (Parola chiave)
• 4H-SiC MOSFET (Parola chiave)
• NITROGEN IMPLANTATION (Parola chiave)

Incoming links:

Insieme di parole chiave

• Nitridation of the SiO(2)/SiC interface by N(+) implantation: Hall versus field effect mobility in n-channel planar 4H-SiC MOSFETs (Contributo in atti di convegno) (Prodotto della ricerca)

Membro di

• PERFORMANCE (Parola chiave)
• OXIDATION (Parola chiave)
• MECHANISMS (Parola chiave)
• 4H-SiC MOSFET (Parola chiave)
• N implantation (Parola chiave)
• Hall measurements (Parola chiave)
• Transmission Electron Microscopy (TEM) (Parola chiave)
• NITROGEN IMPLANTATION (Parola chiave)