Keywords of "High-Dose Phosphorus-Implanted 4H-SiC: Microwave and Conventional Post-Implantation Annealing at Temperatures >= 1700 degrees C"
- Label
- Keywords of "High-Dose Phosphorus-Implanted 4H-SiC: Microwave and Conventional Post-Implantation Annealing at Temperatures >= 1700 degrees C" (literal)
- Parole chiave di "High-Dose Phosphorus-Implanted 4H-SiC: Microwave and Conventional Post-Implantation Annealing at Temperatures >= 1700 degrees C" (literal)
- Insieme di parole chiave di
- Ha membro
- post-implantation annealing (Parola chiave)
- ELECTRON HALL-MOBILITY (Parola chiave)
- CAP (Parola chiave)
- ANISOTROPY (Parola chiave)
- 6H (Parola chiave)
- Silicon carbide (Parola chiave)
- SIMULATION (Parola chiave)
- 4H (Parola chiave)
- doping (Parola chiave)
- electrical characterization (Parola chiave)
- ION-IMPLANTATION (Parola chiave)
- SILICON-CARBIDE (Parola chiave)
- QUALITY (Parola chiave)
- ion implantation (Parola chiave)
Incoming links:
- Insieme di parole chiave
- Membro di
- QUALITY (Parola chiave)
- post-implantation annealing (Parola chiave)
- 4H (Parola chiave)
- ion implantation (Parola chiave)
- ELECTRON HALL-MOBILITY (Parola chiave)
- SIMULATION (Parola chiave)
- ANISOTROPY (Parola chiave)
- CAP (Parola chiave)
- ION-IMPLANTATION (Parola chiave)
- SILICON-CARBIDE (Parola chiave)
- 6H (Parola chiave)
- Silicon carbide (Parola chiave)
- electrical characterization (Parola chiave)
- doping (Parola chiave)
